The impact of process-induced mechanical stress on multi-fingered device performance

2012 ◽  
Author(s):  
Naushad Alam ◽  
S. Dasgupta ◽  
Bulusu Anand
Keyword(s):  
Mechanical Stress ◽  
Device Performance ◽  
The Impact

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

scholarly journals High Frequency Transformer for Ship Electrical Power System

2018 ◽  
Vol 9 (2) ◽  
pp. 347
Author(s):  
AnuPriya K R ◽  
Sasilatha T
Keyword(s):  
High Frequency ◽  
Output Voltage ◽  
Electrical Power ◽  
Device Performance ◽  
Electrical Power System ◽  
Matrix Converters ◽  
Electrical Device ◽  
Line Frequency ◽  
High Frequency Transformer ◽  
The Impact

The system represented during this paper uses 3 matrix converters and a high frequency electrical device to attain isolation and voltage transformation from primary to secondary aspect. Two matrix converters manufacture high frequency voltage across a transformer, with open all over primary. a 3rd matrix device converts the high frequency cut voltage to line frequency. The non-idealities like outflow inductance of the electrical device have a big impact on the device performance. This paper studies the impact of outflow inductance on the regulation of the output voltage of the device. The simulation study has been carried out in SIMULINK and also the results are presented.

Modeling the Impact of Packaging Stress on Device Performance

2005 ◽  
Vol 863 ◽  
Author(s):  
Xiaopeng Xu ◽  
Victor Moroz
Keyword(s):  
Normal Stress ◽  
Mobility Model ◽  
External Pressure ◽  
Stress Pattern ◽  
Fabrication Process ◽  
Device Performance ◽  
Stress Evolution ◽  
Transistor Fabrication ◽  
The Impact ◽  
Additional Device

AbstractIn this study the stress evolution for the entire transistor fabrication process is simulated and the packaging stress is modeled as the external pressure/normal stress acting on the boundaries of the transistor unit cell. The impact on device performance from both the fabrication stress and the packaging stress is investigated using a classical piezo-resistance mobility model. The effect of the packaging stress on device mobility can be either beneficial or detrimental depending on whether the stress is tensile or compressive, on stress pattern, its magnitude, and the transistor type. The results suggest that utilizing both the fabrication stress and the packaging stress for stress engineering can lead to additional device performance enhancements.

scholarly journals Lipid droplets disrupt mechanosensing in human hepatocytes

2020 ◽  
Vol 319 (1) ◽  
pp. G11-G22
Author(s):  
LiKang Chin ◽  
Neil D. Theise ◽  
Abigail E. Loneker ◽  
Paul A. Janmey ◽  
Rebecca G. Wells
Keyword(s):  
Mechanical Stress ◽  
Nuclear Localization ◽  
Lipid Droplets ◽  
Focal Adhesions ◽  
Cell Spreading ◽  
Human Hepatocytes ◽  
Stress Fibers ◽  
Primary Hepatocytes ◽  
The Impact ◽  
Lipid Loading

This work examines the impact of lipid loading on mechanosensing by human hepatocytes. In cirrhotic livers, the presence of large (although not small) lipid droplets increased nuclear localization of the mechanotransducer YAP. In primary hepatocytes in culture, lipid droplets led to decreased stiffness-induced cell spreading and disrupted focal adhesions and stress fibers; the presence of large lipid droplets resulted in increased YAP nuclear localization. Collectively, the data suggest that lipid droplets induce intracellular mechanical stress.

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