Single-mode silicon-on-insulator elliptical microdisk resonators with high Q factors

2011 ◽  
Author(s):  
Kang Xiong ◽  
Xi Xiao ◽  
Yingtao Hu ◽  
Zhiyong Li ◽  
Tao Chu ◽  
...  
Keyword(s):  
Single Mode ◽  
Silicon On Insulator ◽  
High Q ◽  
Microdisk Resonators ◽  
Q Factors

High and Moderate-Level Vacuum Packaging of Vibratory MEMS

2013 ◽  
Vol 2013 (1) ◽  
pp. 000705-000710 ◽  
Author(s):  
Igor P. Prikhodko ◽  
Brenton R. Simon ◽  
Gunjana Sharma ◽  
Sergei A. Zotov ◽  
Alexander A. Trusov ◽  
...  
Keyword(s):  
Vacuum Packaging ◽  
Moderate Level ◽  
Silicon On Insulator ◽  
Quality Factors ◽  
High Q ◽  
Hermetic Sealing ◽  
Hemispherical Resonator ◽  
Q Factors ◽  
Grade Performance

We report vacuum packaging procedures for low-stress die attachment and versatile hermetic sealing of resonant MEMS. The developed in-house infrastructure allows for both high and moderate-level vacuum packaging addressing the requirements of various applications. Prototypes of 100 μm silicon-on-insulator Quadruple Mass Gyroscopes (QMGs) were packaged using the developed process with and without getters. Characterization of stand-alone packaged devices with no getters resulted in stable quality factors (Q-factors) of 1000 (corresponding to 0.5 Torr vacuum level), while devices sealed with activated getters demonstrated Q-factors of 1.2 million (below 0.1 mTorr level inside the package). Due to the high Q-factors achieved in this work, we project that the QMG used in this work can potentially reach the navigation-grade performance, potentially bridging the gap between the inertial silicon MEMS and the state-of-the-art fused quartz hemispherical resonator gyroscopes.

scholarly journals A Novel High Q Lamé-Mode Bulk Resonator with Low Bias Voltage

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 737
Author(s):  
Tianyun Wang ◽  
Zeji Chen ◽  
Qianqian Jia ◽  
Quan Yuan ◽  
Jinling Yang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Integrated Circuit ◽  
Nonlinear Behavior ◽  
Silicon On Insulator ◽  
Transduction Efficiency ◽  
Air Gaps ◽  
High Q ◽  
Bulk Mode ◽  
Q Factors ◽  
Quality Factor Q

This work reports a novel silicon on insulator (SOI)-based high quality factor (Q factor) Lamé-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators with 70 nm air gaps, which have a high resonance frequency of 51.3 MHz and high Q factors over 8000 in air and over 30,000 in vacuum. The high Q values, nano-scale air gaps, and large electrode area greatly improve the capacitive transduction efficiency, which decreases the bias voltage for the high-stiffness bulk mode resonators with high Q. The resonator showed the nonlinear behavior. The proposed resonator can be applied to construct a wireless communication system with low power consumption and integrated circuit (IC) integration.

Analysis of silicon-on-insulator slot waveguide ring resonators targeting high Q-factors

2015 ◽  
Vol 40 (23) ◽  
pp. 5566 ◽  
Author(s):  
Weiwei Zhang ◽  
Samuel Serna ◽  
Xavier Le Roux ◽  
Carlos Alonso-Ramos ◽  
Laurent Vivien ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Ring Resonators ◽  
Slot Waveguide ◽  
High Q ◽  
Waveguide Ring ◽  
Q Factors

scholarly journals Systematic design and fabrication of high-Q single-mode pulley-coupled planar silicon nitride microdisk resonators at visible wavelengths

2010 ◽  
Vol 18 (3) ◽  
pp. 2127 ◽  
Author(s):  
Ehsan Shah Hosseini ◽  
Siva Yegnanarayanan ◽  
Amir Hossein Atabaki ◽  
Mohammad Soltani ◽  
Ali Adibi
Keyword(s):  
Silicon Nitride ◽  
Single Mode ◽  
Systematic Design ◽  
High Q ◽  
Planar Silicon ◽  
Microdisk Resonators ◽  
Visible Wavelengths

scholarly journals Fully Reconfigurable Compact RF Photonic Filters Using High-Q Silicon Microdisk Resonators

2011 ◽  
Author(s):  
Payam Alipour ◽  
Ali Asghar Eftekhar ◽  
Amir Hossein Atabaki ◽  
Qing Li ◽  
Siva Yegnanarayanan ◽  
...  
Keyword(s):  
High Q ◽  
Microdisk Resonators

High-Q Silicon-on-Insulator Micro-Ring Resonator with Silica Covering

2013 ◽  
Vol 684 ◽  
pp. 443-446
Author(s):  
Chao Liu ◽  
Chen Yang Xue ◽  
Dan Feng Cui ◽  
Jun Bin Zang ◽  
Yong Hua Wang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Transmission Spectrum ◽  
Electron Beam Lithography ◽  
Ring Resonator ◽  
Sio2 Layer ◽  
Silicon On Insulator ◽  
New Method ◽  
Ring Resonators ◽  
Q Factor ◽  
High Q

We designed High-Q micro-ring resonators based on SOI material. A new method of using a top SiO2 layer to cover the waveguide is applied and the tested Q factor is as high as 1.0135×104. Micro-ring resonator has been fabricated using Electron-Beam Lithography and Inductive Coupled Plasma. OptiFDTD was used to simulate the micro-ring resonator and we compared the transmission spectrum of this resonator with the resonator without SiO2 covering.

scholarly journals Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform

2013 ◽  
Vol 21 (15) ◽  
pp. 18236 ◽  
Author(s):  
Qing Li ◽  
Ali A. Eftekhar ◽  
Majid Sodagar ◽  
Zhixuan Xia ◽  
Amir H. Atabaki ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Vertical Integration ◽  
Silicon On Insulator ◽  
High Q

Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths

2005 ◽  
Vol 892 ◽  
Author(s):  
Yong-Seok Choi ◽  
Cedrik Meier ◽  
Rajat Sharma ◽  
Kevin Hennessy ◽  
Elaine D. Haberer ◽  
...  
Keyword(s):  
Optical Properties ◽  
Photonic Crystal ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Light Extraction ◽  
Design Parameters ◽  
Multiple Quantum ◽  
Membrane Structures ◽  
High Q ◽  
Q Factors

AbstractWe have investigated the design parameters for high-Q photonic-crystal (PC) bandgap modes in the emission wavelengths of InGaN/GaN multiple quantum wells. We demonstrate experimental schemes to realize 2D triangular-lattice PC membrane structures, which is essential to obtain photonic bandgap (PBG) modes, and the optical properties of L7 membrane nanocavities that consist of seven missing holes in the Γ-K direction. L7 cavities show pronounced resonances with Q factors of 300 to 800 in the PBG as well as the enhancement of light extraction of the broad InGaN/GaN multiple-quantum-well emission by the 2D PBG.

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