25Gbit/s fully CMOS-compatible silicon modulator based on interleaved PN junctions

2011 ◽  
Author(s):  
Xi Xiao ◽  
Yingtao Hu ◽  
Hao Xu ◽  
Xianyao Li ◽  
Kang Xiong ◽  
...  
Keyword(s):  
Cmos Compatible ◽  
Pn Junctions ◽  
Silicon Modulator

10 Gbit/s silicon modulator based on interdigitated PN junctions

2011 ◽  
Author(s):  
M. Ziebell ◽  
D. Marris-Morini ◽  
G. Rasigade ◽  
P. Crozat ◽  
J-M. Fedeli ◽  
...  
Keyword(s):  
Pn Junctions ◽  
Silicon Modulator

CMOS-Compatible Wideband Silicon Modulator

2008 ◽  
Author(s):  
S. J. Spector ◽  
M. W. Geis ◽  
G.-R. Zhou ◽  
M. E. Grein ◽  
R. T. Schulein ◽  
...  
Keyword(s):  
Cmos Compatible ◽  
Silicon Modulator

scholarly journals Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions

2011 ◽  
Vol 19 (15) ◽  
pp. 14690 ◽  
Author(s):  
Melissa Ziebell ◽  
Delphine Marris-Morini ◽  
Gilles Rasigade ◽  
Paul Crozat ◽  
Jean-Marc Fédéli ◽  
...  
Keyword(s):  
Ring Resonator ◽  
Pn Junctions ◽  
Silicon Modulator

scholarly journals CMOS-compatible dual-output silicon modulator for analog signal processing

2008 ◽  
Vol 16 (15) ◽  
pp. 11027 ◽  
Author(s):  
S. J. Spector ◽  
M. W. Geis ◽  
G.-R. Zhou ◽  
M. E. Grein ◽  
F. Gan ◽  
...  
Keyword(s):  
Signal Processing ◽  
Analog Signal Processing ◽  
Analog Signal ◽  
Cmos Compatible ◽  
Silicon Modulator

Pressure Sensor Monolithically Integrating MEMS and CMOS-LSI with CMOS Compatible “Back-end-of-line MEMS processes”

2010 ◽  
Vol 130 (5) ◽  
pp. 170-175
Author(s):  
Tsukasa Fujimori ◽  
Hideaki Takano ◽  
Yuko Hanaoka ◽  
Yasushi Goto
Keyword(s):  
Pressure Sensor ◽  
Cmos Compatible

THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS.

2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev
Keyword(s):  
Spectral Region ◽  
Current Flow ◽  
Oxygen Adsorption ◽  
Tunneling Mechanism ◽  
Pn Junction ◽  
Flow Through ◽  
Pn Junctions ◽  
Effect Of Oxygen

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

A CMOS-compatible high-speed silicon lateral trench photodetector

2002 ◽  
Author(s):  
M. Yang ◽  
K. Rim ◽  
D. Rogers ◽  
J. Schaub ◽  
J. Welser ◽  
...  
Keyword(s):  
High Speed ◽  
Cmos Compatible

scholarly journals NDIR CO2 gas sensing using CMOS compatible MEMS ScAlN-based pyroelectric detector

2021 ◽  
pp. 130437
Author(s):  
Doris Keh Ting Ng ◽  
Chong Pei Ho ◽  
Linfang Xu ◽  
Weiguo Chen ◽  
Yuan Hsing Fu ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Pyroelectric Detector ◽  
Co2 Gas ◽  
Cmos Compatible
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