10 Gbit/s silicon modulator based on interdigitated PN junctions

Author(s):  
M. Ziebell ◽  
D. Marris-Morini ◽  
G. Rasigade ◽  
P. Crozat ◽  
J-M. Fedeli ◽  
...  
2011 ◽  
Author(s):  
Xi Xiao ◽  
Yingtao Hu ◽  
Hao Xu ◽  
Xianyao Li ◽  
Kang Xiong ◽  
...  

2011 ◽  
Vol 19 (15) ◽  
pp. 14690 ◽  
Author(s):  
Melissa Ziebell ◽  
Delphine Marris-Morini ◽  
Gilles Rasigade ◽  
Paul Crozat ◽  
Jean-Marc Fédéli ◽  
...  

2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.


2011 ◽  
Vol 99 (13) ◽  
pp. 133114 ◽  
Author(s):  
K. W. Park ◽  
H. P. Nair ◽  
A. M. Crook ◽  
S. R. Bank ◽  
E. T. Yu

1967 ◽  
Vol 10 (3) ◽  
pp. 209-212 ◽  
Author(s):  
H.K. Gummel
Keyword(s):  

2000 ◽  
Vol 159-160 ◽  
pp. 308-312 ◽  
Author(s):  
Y. Ohno ◽  
I. Arata ◽  
F. Matsukura ◽  
K. Ohtani ◽  
S. Wang ◽  
...  

2014 ◽  
Vol 43 (6) ◽  
pp. 2376-2383 ◽  
Author(s):  
R. Chavez ◽  
S. Angst ◽  
J. Hall ◽  
J. Stoetzel ◽  
V. Kessler ◽  
...  

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