Ultra-high-precision surface structuring by synchronizing a galvo scanner with an ultra-short-pulsed laser system in MOPA arrangement

2012 ◽  
Author(s):  
B. Jaeggi ◽  
B. Neuenschwander ◽  
U. Hunziker ◽  
J. Zuercher ◽  
T. Meier ◽  
...  
Keyword(s):  
High Precision ◽  
Laser System ◽  
Pulsed Laser ◽  
Surface Structuring

A 2-µm Continuous-Wave Laser System for Safe and High-Precision Dissection During NOTES Procedures

2010 ◽  
Vol 55 (9) ◽  
pp. 2463-2470 ◽  
Author(s):  
Xavier Dray ◽  
Gianfranco Donatelli ◽  
Devi Mukkai Krishnamurty ◽  
Elena Dubcenco ◽  
Ronald J. Wroblewski ◽  
...  
Keyword(s):  
High Precision ◽  
Continuous Wave ◽  
Laser System ◽  
Continuous Wave Laser ◽  
Wave Laser

High precision balanced mode polarimetry with a pulsed laser beam

1995 ◽  
Vol 119 (3-4) ◽  
pp. 403-414 ◽  
Author(s):  
M. Bouchiat ◽  
D. Chauvat ◽  
J. Guéna ◽  
Ph. Jacquier ◽  
M. Lintz ◽  
...  
Keyword(s):  
Laser Beam ◽  
High Precision ◽  
Pulsed Laser ◽  
Pulsed Laser Beam

scholarly journals Qualification of Operational Amplifier used in Satellite Subsystem using Picosecond Pulsed Laser System

2020 ◽  
Vol 9 (2) ◽  
pp. 523-527
Keyword(s):  
Cross Section ◽  
Operational Amplifier ◽  
Second Harmonic ◽  
Laser System ◽  
Threshold Energy ◽  
Pulsed Laser ◽  
Spot Size ◽  
Single Event ◽  
532 Nm ◽  
Pulsed Laser Irradiation

Picosecond Pulsed Laser System (PPLS) was used to simulate the single event effects (SEE) on satellite electronic components. Single event transients effect induced in an operational amplifier (LM324) to determine how transient amplitude and charge collection varied with pulsed laser energies. The wavelength and the focused spot size are the primary factors generating the resultant charge density profile. The degradation performance of LM324 induced by pulsed laser irradiation with two wavelength (1064nm, 532nm) is determined as a function of laser cross section. The transient voltage changed due to pulsed laser hitting specific transistors. This research shows the sensitivity mapping of LM324 under the effect of fundamental and second harmonic wavelengths. Determine the threshold energy of the SET in both wavelength, and compare the laser cross section of 1064 nm beam and 532 nm beam.

High-precision and ultrafast UV laser system for next-generation flexible PCB drilling

2016 ◽  
Vol 38 ◽  
pp. 107-113 ◽  
Author(s):  
Kwang-Ryul Kim ◽  
Jae-Hee Cho ◽  
Na-Young Lee ◽  
Hyun-Jin Kim ◽  
Sung-Hak Cho ◽  
...  
Keyword(s):  
High Precision ◽  
Laser System ◽  
Uv Laser ◽  
Next Generation ◽  
Flexible Pcb

scholarly journals Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3411 ◽  
Author(s):  
Cheng Gu ◽  
Rui Chen ◽  
George Belev ◽  
Shuting Shi ◽  
Haonan Tian ◽  
...  
Keyword(s):  
Laser System ◽  
Pulsed Laser ◽  
Photon Absorption ◽  
Testing System ◽  
Single Event ◽  
Single Event Effects ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Sram Cell ◽  
Sensitivity Map

Single-event effects (SEEs) in integrated circuits and devices can be studied by utilizing ultra-fast pulsed laser system through Two Photon Absorption process. This paper presents technical ways to characterize key factors for laser based SEEs mapping testing system: output power from laser source, spot size focused by objective lens, opening window of Pockels cell, and calibration of injected laser energy. The laser based SEEs mapping testing system can work in a stable and controllable status by applying these methods. Furthermore, a sensitivity map of a Static Random Access Memory (SRAM) cell with a 65 nm technique node was created through the established laser system. The sensitivity map of the SRAM cell was compared to a map generated by a commercial simulation tool (TFIT), and the two matched well. In addition, experiments in this paper also provided energy distribution profile along Z axis that is the direction of the pulsed laser injection and threshold energy for different SRAM structures.

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