A narrow linewidth picosecond pulsed laser system for hydrogen ion beam stripping

2012 ◽  
Author(s):  
Yun Liu ◽  
Chunning Huang ◽  
Craig Deibele
Keyword(s):  
Ion Beam ◽  
Laser System ◽  
Pulsed Laser ◽  
Hydrogen Ion ◽  
Narrow Linewidth

Effect of Hydrogen ion beam irradiation onto the FIR reflectivity of pulsed laser deposited mirror like Tungsten films

2012 ◽  
Vol 423 (1-3) ◽  
pp. 53-60 ◽  
Author(s):  
A.T.T. Mostako ◽  
Alika Khare ◽  
C.V.S. Rao ◽  
Prakash M. Raole ◽  
Sudhirsinh Vala ◽  
...  
Keyword(s):  
Ion Beam ◽  
Pulsed Laser ◽  
Hydrogen Ion ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

Low repetition rate, narrow-linewidth, all-fiber 1064 nm laser system

2021 ◽  
pp. 103930
Author(s):  
Yaoyao Qi ◽  
Yu Zhang ◽  
Song Yang ◽  
Xiaowei Huo ◽  
Zhenxu Bai ◽  
...  
Keyword(s):  
Repetition Rate ◽  
Laser System ◽  
Narrow Linewidth

Structure of diamond surface defective layer damaged by hydrogen ion beam exposure

2006 ◽  
Vol 15 (4-8) ◽  
pp. 703-706 ◽  
Author(s):  
Y. Yamazaki ◽  
K. Ishikawa ◽  
N. Mizuochi ◽  
S. Yamasaki
Keyword(s):  
Ion Beam ◽  
Hydrogen Ion ◽  
Diamond Surface ◽  
Defective Layer

scholarly journals In situcleaning of metal cathodes using a hydrogen ion beam

2006 ◽  
Vol 9 (6) ◽  
Author(s):  
D. H. Dowell ◽  
F. K. King ◽  
R. E. Kirby ◽  
J. F. Schmerge ◽  
J. M. Smedley
Keyword(s):  
Ion Beam ◽  
Hydrogen Ion

Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

1997 ◽  
Vol 498 ◽  
Author(s):  
K. F. Chan ◽  
X.-A. Zhao ◽  
C. W. Ong
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Film Structure ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Ion Beam Deposition ◽  
Valence Bands ◽  
Beam Deposition

ABSTRACTCNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

Study on space charge compensation in negative hydrogen ion beam

2016 ◽  
Vol 87 (2) ◽  
pp. 02B915 ◽  
Author(s):  
A. L. Zhang ◽  
S. X. Peng ◽  
H. T. Ren ◽  
T. Zhang ◽  
J. F. Zhang ◽  
...  
Keyword(s):  
Space Charge ◽  
Ion Beam ◽  
Charge Compensation ◽  
Hydrogen Ion ◽  
Negative Hydrogen Ion
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