scholarly journals High bandwidth constant current modulation circuit for carrier lifetime measurements in semiconductor lasers

2012 ◽  
Author(s):  
Umesh Singh ◽  
Jon M. Pikal
Keyword(s):  
Semiconductor Lasers ◽  
Carrier Lifetime ◽  
Constant Current ◽  
Lifetime Measurements ◽  
Current Modulation ◽  
High Bandwidth

True carrier lifetime measurements of semiconductor lasers

1995 ◽  
Vol 31 (20) ◽  
pp. 1747-1748 ◽  
Author(s):  
G.E. Shtengel ◽  
D.A. Ackerman ◽  
P.A. Morton
Keyword(s):  
Semiconductor Lasers ◽  
Carrier Lifetime ◽  
Lifetime Measurements

Impedance independent optical carrier lifetime measurements in semiconductor lasers

1998 ◽  
Vol 69 (12) ◽  
pp. 4247-4248 ◽  
Author(s):  
J. M. Pikal ◽  
C. S. Menoni ◽  
H. Temkin ◽  
P. Thiagarajan ◽  
G. Y. Robinson
Keyword(s):  
Semiconductor Lasers ◽  
Carrier Lifetime ◽  
Optical Carrier ◽  
Lifetime Measurements

Impedance‐corrected carrier lifetime measurements in semiconductor lasers

1995 ◽  
Vol 67 (11) ◽  
pp. 1506-1508 ◽  
Author(s):  
G. E. Shtengel ◽  
D. A. Ackerman ◽  
P. A. Morton ◽  
E. J. Flynn ◽  
M. S. Hybertsen
Keyword(s):  
Semiconductor Lasers ◽  
Carrier Lifetime ◽  
Lifetime Measurements

scholarly journals Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements

2021 ◽  
Vol 118 (25) ◽  
pp. 252105
Author(s):  
K. Yokoyama ◽  
J. S. Lord ◽  
J. Miao ◽  
P. Murahari ◽  
A. J. Drew
Keyword(s):  
Carrier Lifetime ◽  
Surface Recombination ◽  
Lifetime Measurements

Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC

2018 ◽  
Vol 924 ◽  
pp. 269-272 ◽  
Author(s):  
Shinichi Mae ◽  
Takeshi Tawara ◽  
Hidekazu Tsuchida ◽  
Masashi Kato
Keyword(s):  
Carrier Lifetime ◽  
Laser Light ◽  
Probe Laser ◽  
Free Carrier Absorption ◽  
Cross Sectional ◽  
Lifetime Measurements ◽  
Control Distribution ◽  
System A ◽  
Excitation Laser ◽  
Carrier Absorption

For high voltage SiC bipolar devices, carrier lifetime is an important parameter, and for optimization of device performance, we need to control distribution of the carrier lifetime in a wafer. So far, there have been limited systems for depth-resolved carrier lifetime measurements without cross sectional cut. In this study, we adopted a free carrier absorption technique and made local overlapping of the probe laser light with excitation laser light to develop depth-resolved carrier lifetime measurements. We named the developed system a microscopic FCA system and demonstrated measurement results for samples with and without intentional carrier lifetime distribution.

Carrier Lifetime Measurements by Photoconductance at Low Temperature on Passivated Crystalline Silicon Wafers

2013 ◽  
Vol 1536 ◽  
pp. 119-125 ◽  
Author(s):  
Guillaume Courtois ◽  
Bastien Bruneau ◽  
Igor P. Sobkowicz ◽  
Antoine Salomon ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Doping Density ◽  
Lifetime Measurements ◽  
Effective Lifetime

ABSTRACTWe propose an implementation of the PCD technique to minority carrier effective lifetime assessment in crystalline silicon at 77K. We focus here on (n)-type, FZ, polished wafers passivated by a-Si:H deposited by PECVD at 200°C. The samples were immersed into liquid N2 contained in a beaker placed on a Sinton lifetime tester. Prior to be converted into lifetimes, data were corrected for the height shift induced by the beaker. One issue lied in obtaining the sum of carrier mobilities at 77K. From dark conductance measurements performed on the lifetime tester, we extracted an electron mobility of 1.1x104 cm².V-1.s-1 at 77K, the doping density being independently calculated in order to account for the freezing effect of dopants. This way, we could obtain lifetime curves with respect to the carrier density. Effective lifetimes obtained at 77K proved to be significantly lower than at RT and not to depend upon the doping of the a-Si:H layers. We were also able to experimentally verify the expected rise in the implied Voc, which, on symmetrically passivated wafers, went up from 0.72V at RT to 1.04V at 77K under 1 sun equivalent illumination.

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