Impedance independent optical carrier lifetime measurements in semiconductor lasers

1998 ◽  
Vol 69 (12) ◽  
pp. 4247-4248 ◽  
Author(s):  
J. M. Pikal ◽  
C. S. Menoni ◽  
H. Temkin ◽  
P. Thiagarajan ◽  
G. Y. Robinson
Keyword(s):  
Semiconductor Lasers ◽  
Carrier Lifetime ◽  
Optical Carrier ◽  
Lifetime Measurements

True carrier lifetime measurements of semiconductor lasers

1995 ◽  
Vol 31 (20) ◽  
pp. 1747-1748 ◽  
Author(s):  
G.E. Shtengel ◽  
D.A. Ackerman ◽  
P.A. Morton
Keyword(s):  
Semiconductor Lasers ◽  
Carrier Lifetime ◽  
Lifetime Measurements

Impedance‐corrected carrier lifetime measurements in semiconductor lasers

1995 ◽  
Vol 67 (11) ◽  
pp. 1506-1508 ◽  
Author(s):  
G. E. Shtengel ◽  
D. A. Ackerman ◽  
P. A. Morton ◽  
E. J. Flynn ◽  
M. S. Hybertsen
Keyword(s):  
Semiconductor Lasers ◽  
Carrier Lifetime ◽  
Lifetime Measurements

scholarly journals Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements

2021 ◽  
Vol 118 (25) ◽  
pp. 252105
Author(s):  
K. Yokoyama ◽  
J. S. Lord ◽  
J. Miao ◽  
P. Murahari ◽  
A. J. Drew
Keyword(s):  
Carrier Lifetime ◽  
Surface Recombination ◽  
Lifetime Measurements

Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC

2018 ◽  
Vol 924 ◽  
pp. 269-272 ◽  
Author(s):  
Shinichi Mae ◽  
Takeshi Tawara ◽  
Hidekazu Tsuchida ◽  
Masashi Kato
Keyword(s):  
Carrier Lifetime ◽  
Laser Light ◽  
Probe Laser ◽  
Free Carrier Absorption ◽  
Cross Sectional ◽  
Lifetime Measurements ◽  
Control Distribution ◽  
System A ◽  
Excitation Laser ◽  
Carrier Absorption

For high voltage SiC bipolar devices, carrier lifetime is an important parameter, and for optimization of device performance, we need to control distribution of the carrier lifetime in a wafer. So far, there have been limited systems for depth-resolved carrier lifetime measurements without cross sectional cut. In this study, we adopted a free carrier absorption technique and made local overlapping of the probe laser light with excitation laser light to develop depth-resolved carrier lifetime measurements. We named the developed system a microscopic FCA system and demonstrated measurement results for samples with and without intentional carrier lifetime distribution.

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