The impact of substrate properties on the electromigration resistance of sputter-deposited Cu thin films

2011 ◽  
Author(s):  
A. Bittner ◽  
N. Pagel ◽  
H. Seidel ◽  
U. Schmid
Keyword(s):  
Thin Films ◽  
Substrate Properties ◽  
Sputter Deposited ◽  
The Impact

The impact of substrate properties and thermal annealing on tantalum nitride thin films

2012 ◽  
Vol 258 (7) ◽  
pp. 2894-2900 ◽  
Author(s):  
M. Grosser ◽  
M. Münch ◽  
H. Seidel ◽  
C. Bienert ◽  
A. Roosen ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Tantalum Nitride ◽  
Substrate Properties ◽  
The Impact

Piezoelectric Properties of Sputtered AlN Thin Films and their Applications

2008 ◽  
Vol 54 ◽  
pp. 41-49 ◽  
Author(s):  
Ulrich Schmid ◽  
José Luis Sánchez-Rojas
Keyword(s):  
Thin Films ◽  
Qualitative Evaluation ◽  
Surface Characteristics ◽  
Axis Orientation ◽  
Aln Film ◽  
Wet Chemical ◽  
Sputter Deposited ◽  
The Impact ◽  
Aluminium Target

In this study, aluminum nitride (AlN) thin films reactively sputter deposited from an aluminium target are characterized both under material related aspects as well as on device level for resonantly driven gyroscopes. The first topic comprises a qualitative evaluation of the c-axis orientation by applying a wet chemical etching procedure in phosphoric acid to specimens synthesized under varying sputter deposition conditions. Samples with a high c-axis orientation show a low etch rate and smooth surface characteristics on the etched areas and vice versa. Furthermore, a quantitative determination of the piezoelectric coefficients is presented including the impact of the silicon substrate on the change in AlN film thickness under excitation. With this advanced approach, the d33 and the d31 coefficients are gained simultaneously with high accuracy comparing FEM simulations and interferometric measurements. Finally, AlN are applied to bulkmicromachined gyroscopes to stimulate the drive mode. Parasitic effects on the performance generated by the microactuator elements are identified and potential improvements are proposed.

Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

2012 ◽  
Vol 101 (22) ◽  
pp. 221602 ◽  
Author(s):  
M. Schneider ◽  
A. Bittner ◽  
F. Patocka ◽  
M. Stöger-Pollach ◽  
E. Halwax ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Substrate Properties ◽  
Sputter Deposited

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Transformation and Deformation Behavior in Sputter-Deposited Ti-Ni-Cu Thin Films

1995 ◽  
Vol 05 (C8) ◽  
pp. C8-689-C8-694 ◽  
Author(s):  
T. Hashinaga ◽  
S. Miyazaki ◽  
T. Ueki ◽  
H. Horikawa
Keyword(s):  
Thin Films ◽  
Deformation Behavior ◽  
Sputter Deposited

The Correlation of Adhesion Strength with Barrier Structure in Cu Metallization

2003 ◽  
Vol 766 ◽  
Author(s):  
A. Sekiguchi ◽  
J. Koike ◽  
K. Ueoka ◽  
J. Ye ◽  
H. Okamura ◽  
...  
Keyword(s):  
Thin Films ◽  
Adhesion Strength ◽  
Nitrogen Concentration ◽  
Scratch Test ◽  
Barrier Structure ◽  
Barrier Layers ◽  
Cu Metallization ◽  
Microstructure Observation ◽  
Sputter Deposited ◽  
Sulfur Containing

AbstractAdhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β;-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.

scholarly journals The impact of fluence dependent 120 MeV Ag swift heavy ion irradiation on the changes in structural, electronic, and optical properties of AgInSe2 nano-crystalline thin films for optoelectronic applications

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26218-26227
Author(s):  
R. Panda ◽  
S. A. Khan ◽  
U. P. Singh ◽  
R. Naik ◽  
N. C. Mishra
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Nano Crystalline ◽  
Shi Irradiation ◽  
The Impact

Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner.

scholarly journals Advanced Greenhouse Horticulture: New Technologies and Cultivation Practices

Horticulturae ◽  
2020 ◽  
Vol 7 (1) ◽  
pp. 1
Author(s):  
Athanasios Koukounaras
Keyword(s):  
New Technologies ◽  
Light Emitting Diode ◽  
Dye Sensitized Solar Cells ◽  
Original Research ◽  
Brewery Wastewater ◽  
Cultivation Practices ◽  
Substrate Properties ◽  
Greenhouse Horticulture ◽  
Negative Impacts ◽  
The Impact

Greenhouse horticulture is one of the most intensive agricultural systems, with the advantages of environmental parameter control (temperature, light, etc.), higher efficiency of resource utilization (water, fertilizers, etc.) and the use of advanced technologies (hydroponics, automation, etc.) for higher productivity, earliness, stability of production and better quality. On the other hand, climate change and the application of high inputs without suitable management could have negative impacts on the expansion of the greenhouse horticulture sector. This special issue gathers twelve papers: three reviews and nine of original research. There is one review that focuses on irrigation of greenhouse crops, while a second surveys the effects of biochar on container substrate properties and plant growth. A third review examines the impact of light quality on plant–microbe interactions, especially non-phototrophic organisms. The research papers report both the use of new technologies as well as advanced cultivation practices. In particular, new technologies are presented such as dye-sensitized solar cells for the glass cover of a greenhouse, automation for water and nitrogen deficit stress detection in soilless tomato crops based on spectral indices, light-emitting diode (LED) lighting and gibberellic acid supplementation on potted ornamentals, the integration of brewery wastewater treatment through anaerobic digestion with substrate-based soilless agriculture, and application of diatomaceous earth as a silica supplement on potted ornamentals. Research studies about cultivation practices are presented comparing different systems (organic-conventional, aeroponic-nutrient film technique (NFT)-substrate culture), quantitative criteria for determining the quality of grafted seedlings, and of wild species as alternative crops for cultivation.

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