Large area electro-optic spinel windows: advances in manufacturing

2011 ◽  
Author(s):  
Jeffrey J. Kutsch ◽  
Evans A. LaRoche ◽  
Lynda Renomeron ◽  
Larry Fehrenbacher ◽  
Larry Shaffer ◽  
...  
Keyword(s):  
Large Area ◽  
Electro Optic

scholarly journals Progressive Poling of Large Area, High r33 Electro-Optic Polymer SEO100c

2021 ◽  
Vol 11 (17) ◽  
pp. 8108
Author(s):  
Michael Maurer ◽  
Evan Gawron ◽  
Christopher Middlebrook
Keyword(s):  
Extended Period ◽  
High Yield ◽  
Large Area ◽  
Device Structure ◽  
Poling Process ◽  
Electro Optic ◽  
Waveguide Modulator ◽  
The Impact ◽  
Selection Of

SEO100c, an EO-polymer, has been reported of having an r33 in excess of 100 pm/V. Experimental poling research was performed on rib waveguide modulator for device design and development. Reported is the determination of the impact that temperature and voltage have on the poling of a SEO100c waveguide device in order to maximize the r33 while avoiding damage to the device structure ensuring high yield in manufacture. The poling process is shown to have a nonlinear relationship between r33 and poling field aiding in the selection of achievable poling voltages for required r33 values. Device thermal stability is quantified and reported for the complete poling process and the impacts upon r33. Investigation into the possible relaxation of device r33 is measured over an extended period demonstrating desirable use within deployable devices.

Large-area Fabry–Perot modulator based on electro-optic polymers

2005 ◽  
Vol 44 (29) ◽  
pp. 6235 ◽  
Author(s):  
Nils Benter ◽  
Ralph Peter Bertram ◽  
Elisabeth Soergel ◽  
Karsten Buse ◽  
Dirk Apitz ◽  
...  
Keyword(s):  
Large Area ◽  
Electro Optic ◽  
Fabry Perot

Characterizing large-area electro-optic crystals toward two-dimensional real-time terahertz imaging

2009 ◽  
Vol 48 (27) ◽  
pp. 5197 ◽  
Author(s):  
Fanzhen Meng ◽  
Mark D. Thomson ◽  
Volker Blank ◽  
Wolff von Spiegel ◽  
Torsten Löffler ◽  
...  
Keyword(s):  
Real Time ◽  
Terahertz Imaging ◽  
Two Dimensional ◽  
Large Area ◽  
Electro Optic

scholarly journals Large-area electro-optic ZnTe terahertz emitters

2005 ◽  
Vol 13 (14) ◽  
pp. 5353 ◽  
Author(s):  
T. Löffler ◽  
T. Hahn ◽  
M. Thomson ◽  
F. Jacob ◽  
H. G. Roskos
Keyword(s):  
Large Area ◽  
Electro Optic ◽  
Terahertz Emitters

Large-Area Organic Electro-optic Single Crystalline Thin Films Grown by Evaporation-Induced Local Supersaturation with Surface Interactions

2009 ◽  
Vol 9 (5) ◽  
pp. 2512-2516 ◽  
Author(s):  
Seong-Ji Kwon ◽  
Christoph Hunziker ◽  
O-Pil Kwon ◽  
Mojca Jazbinsek ◽  
Peter Günter
Keyword(s):  
Thin Films ◽  
Surface Interactions ◽  
Large Area ◽  
Single Crystalline ◽  
Electro Optic ◽  
Local Supersaturation

Convergent Beam Electron Diffraction

1978 ◽  
Vol 36 (3) ◽  
pp. 304-315
Author(s):  
G. Lehmpfuhl
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Crystal Surface ◽  
Diffraction Spot ◽  
Crystal Thickness ◽  
Large Area ◽  
Electron Microscopic ◽  
Additional Information ◽  
Microscopic Investigations

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.

TEM Study of a Tilt Boundary in Hot-Pressed Silicon

1981 ◽  
Vol 39 ◽  
pp. 160-161
Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast
Keyword(s):  
Electron Diffraction ◽  
Imaging Technique ◽  
Interface Structure ◽  
Large Area ◽  
Weak Beam ◽  
Lattice Fringe ◽  
Electron Diffraction Technique ◽  
Tilt Boundaries ◽  
Beam Technique ◽  
Twist Boundaries

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.

P20 phosphor on polyimide as a large area high-resolution transmission screen for slow scan CCD systems

1995 ◽  
Vol 53 ◽  
pp. 20-21
Author(s):  
C. C. Ahn ◽  
S. Karnes ◽  
M. Lvovsky ◽  
C. M. Garland ◽  
H. A. Atwater ◽  
...  
Keyword(s):  
Mechanical Stability ◽  
High Energy ◽  
Practical Implementation ◽  
Line Pair ◽  
Modulation Transfer ◽  
Large Area ◽  
Ccd Imaging ◽  
Transmission Electron ◽  
The One ◽  
Beam Broadening

The bane of CCD imaging systems for transmission electron microscopy at intermediate and high voltages has been their relatively poor modulation transfer function (MTF), or line pair resolution. The problem originates primarily with the phosphor screen. On the one hand, screens should be thick so that as many incident electrons as possible are converted to photons, yielding a high detective quantum efficiency(DQE). The MTF diminishes as a function of scintillator thickness however, and to some extent as a function of fluorescence within the scintillator substrates. Fan has noted that the use of a thin layer of phosphor beneath a self supporting 2μ, thick Al substrate might provide the most appropriate compromise for high DQE and MTF in transmission electron microcscopes which operate at higher voltages. Monte Carlo simulations of high energy electron trajectories reveal that only little beam broadening occurs within this thickness of Al film. Consequently, the MTF is limited predominantly by broadening within the thin phosphor underlayer. There are difficulties however, in the practical implementation of this design, associated mostly with the mechanical stability of the Al support film.

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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