Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers

2010 ◽  
Author(s):  
Yan Chen ◽  
Luhong Mao ◽  
Weilian Guo ◽  
Shilin Zhang ◽  
Sheng Xie ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Bistability ◽  
Ring Lasers ◽  
Semiconductor Ring Lasers ◽  
Multi Quantum Well

Optical bistability of In0.52Al0.48As/InP type II multi-quantum well diodes

1996 ◽  
Vol 32 (18) ◽  
pp. 1729 ◽  
Author(s):  
Y. Kawamura ◽  
Y. Hakone ◽  
H. Iwamura ◽  
T. Ito ◽  
N. Inoue
Keyword(s):  
Quantum Well ◽  
Optical Bistability ◽  
Type Ii ◽  
Multi Quantum Well

Accurate physical modelling of multi quantum well ring lasers

2005 ◽  
Vol 2 (2) ◽  
pp. 59-70 ◽  
Author(s):  
F DeLeonardis ◽  
V M N Passaro
Keyword(s):  
Quantum Well ◽  
Physical Modelling ◽  
Ring Lasers ◽  
Multi Quantum Well

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

scholarly journals Noise properties of semiconductor ring lasers

2008 ◽  
Author(s):  
Antonio Pérez S. ◽  
Roberta Zambrini ◽  
Alessandro Scirè ◽  
Pere Colet
Keyword(s):  
Ring Lasers ◽  
Semiconductor Ring Lasers

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 3 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
A. Rybaltowski ◽  
Xiaolong Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multi Quantum Well ◽  
Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

Sign in / Sign up

Export Citation Format

Share Document