Optical bistability of In0.52Al0.48As/InP type II multi-quantum well diodes

1996 ◽  
Vol 32 (18) ◽  
pp. 1729 ◽  
Author(s):  
Y. Kawamura ◽  
Y. Hakone ◽  
H. Iwamura ◽  
T. Ito ◽  
N. Inoue
Keyword(s):  
Quantum Well ◽  
Optical Bistability ◽  
Type Ii ◽  
Multi Quantum Well

Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers

2010 ◽  
Author(s):  
Yan Chen ◽  
Luhong Mao ◽  
Weilian Guo ◽  
Shilin Zhang ◽  
Sheng Xie ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Bistability ◽  
Ring Lasers ◽  
Semiconductor Ring Lasers ◽  
Multi Quantum Well

Type-I and type-II interband transitions in CdSe/ZnTe quantum well structures

1998 ◽  
Vol 108 (4) ◽  
pp. 205-209 ◽  
Author(s):  
J Haetty ◽  
E.H Lee ◽  
H Luo ◽  
A Petrou ◽  
J Warnock
Keyword(s):  
Quantum Well ◽  
Type I ◽  
Type Ii ◽  
Interband Transitions ◽  
Quantum Well Structures

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

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