Formation of self-organized nanostructures on Si surfaces during low energy ion beam erosion

2010 ◽  
Author(s):  
Zhi-li Chen ◽  
Wei-guo Liu ◽  
Xiao-hui Xu
Keyword(s):  
Ion Beam ◽  
2005 ◽  
Vol 87 (3) ◽  
pp. 033113 ◽  
Author(s):  
B. Ziberi ◽  
F. Frost ◽  
B. Rauschenbach ◽  
Th. Höche
Keyword(s):  
Ion Beam ◽  

2013 ◽  
Vol 552 ◽  
pp. 238-243
Author(s):  
Zhi Chao Wang ◽  
Hua Dong Yu ◽  
Da Seng Wang ◽  
Chun Yang Wang

Ultra-smooth optical surfaces are very important in widely fields. They’re not only used in optics, but also in the electronics. Ultra-smooth surfaces are difficult to process, because the rms is less than 1nm. The process methods have Teflon Polishing, Float Polishing (FP), Magnetorheological Finishing (MRF) and Ion Beam Figuring (IBF) etc. Compared with conventional polishing, IBF have higher processing quality and efficiency. Low-energy (<2Kev) IBF can form the self-organized nanopatterns on optical surfaces. Since IBF is a non-contact method; there is no edge effect during the process. We can change the ion beam parameters to get dot or ripple pattern on substrate. Only the self-organized ripple pattern is discussed in the paper. For the prediction of process parameters, the principle theories Sigmund theory and BH model are used the interplay between the angle of ion beam incidence, ion flux, incident energy and substrate temperature leads to the self-assembly, which are considered by these theory. In this paper the angle of incidence and incident energy are mainly researched on. Processing nanopatterns on Si has been simulated by SRIM program with these theory and the results reveal several laws in the process. It is believed that these laws will help us to well predict the ion beam parameters and lead IBE experiments.


1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).


Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.


2021 ◽  
Vol 27 (S1) ◽  
pp. 20-22
Author(s):  
Chengge Jiao ◽  
Jeremy Graham ◽  
Xu Xu ◽  
Timothy Burnett ◽  
Brandon van Leer

2021 ◽  
Vol 44 (1) ◽  
Author(s):  
SUSHEEL KUMAR GUNDANNA ◽  
PUSPENDU GUHA ◽  
B SUNDARAVEL ◽  
UMANANDA M BHATTA
Keyword(s):  
Ion Beam ◽  

Author(s):  
Satyanarayan Dhal ◽  
Pritam Das ◽  
Arpita Patro ◽  
Madhuchhanda Swain ◽  
Sheela Rani Hota ◽  
...  

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