High-performance large format impurity band conductor focal plane arrays for astronomy applications

Author(s):  
Robert Mills ◽  
John Edwards ◽  
Eric Beuville ◽  
Andrew Toth ◽  
Elizabeth Corrales ◽  
...  
2011 ◽  
Author(s):  
Robert Mills ◽  
Eric Beuville ◽  
Elizabeth Corrales ◽  
Alan Hoffman ◽  
Gert Finger ◽  
...  

2001 ◽  
Vol 30 (6) ◽  
pp. 566-573 ◽  
Author(s):  
J. B. Varesi ◽  
R. E. Bornfreund ◽  
A. C. Childs ◽  
W. A. Radford ◽  
K. D. Maranowski ◽  
...  

2009 ◽  
Author(s):  
Robert Rehm ◽  
Martin Walther ◽  
Johannes Schmitz ◽  
Frank Rutz ◽  
Joachim Fleissner ◽  
...  

2003 ◽  
Author(s):  
Arnold C. Goldberg ◽  
Kwong-Kit Choi ◽  
Murzy Jhabvala ◽  
Anh La ◽  
Parvez N. Uppal ◽  
...  

2002 ◽  
Vol 12 (03) ◽  
pp. 659-690 ◽  
Author(s):  
ARNOLD GOLDBERG

Since the first demonstration of the quantum well infrared photodetector (QWIP) in the 1980s, there has been much progress in the application of QWIPs to the production infrared (IR) imaging systems. At this time, focal plane arrays (FPAs) made from QWIPs are readily available for insertion in IR cameras with formats as large as 640 × 480 pixels. Several organizations now have commercially available IR camera systems using QWIPs. In spite of the low single-pixel quantum efficiency relative to MCT, excellent IR imagery has been demonstrated with large format (640 × 480 pixels) single-band and moderate format (256 × 256 pixels) dual-band FPAs. With a large-format staring FPA, one can integrate the signal current for a relatively long time to produce images of similar quality to that from a scanned line array run at the same frame rate. In fact, it can be shown that due to the nature of the noise in a QWIP device, the noise performance of a QWIP FPA can be better than that of MCT FPA as long as the conversion efficiency (the product of the quantum efficiency and the photoconductive gain) is high enough for the read-out integrated circuit (ROIC) integration capacitor to be filled in a frame time. In this chapter the results of laboratory and field tests on large-format single-color QWIP FPAs operating in the LWIR band and dual-band FPAs operating in both the MWIR and LWIR bands simultaneously will be shown. Single-color and dual-band arrays will be shown to give excellent imaging performance and that dual-band FPAs offer unique capabilities to investigate the phenomenology of targets and backgrounds. The performance of the FPAs will be presented from a system performance perspective over a wide range of operating conditions (temperature, bias, integration time, etc.). Results of measurements of noise-equivalent temperature difference (NEΔT), minimum resolvable temperature difference (MRTD measured as a function of target spatial frequency), responsivity, and dark current will be reported. Imagery collected in the field will show the utility of large-format LWIR FPAs for increasing the range at which targets can be identified over previous-generation scanning imagers. Dual-band imagery collected using a QWIP FPA will show how such an array as part of a future imaging system may be able to exploit differences in the IR signatures of targets and backgrounds in the MWIR and LWIR bands to enhance the visibility of targets in cluttered environments. We also show how such an array can be used to make accurate remote temperature measurements. Finally, we will compare the performance of state-of-the-art FPAs made from QWIPs and MCT.


2017 ◽  
Vol 80 ◽  
pp. 112-119 ◽  
Author(s):  
Xue Li ◽  
Haimei Gong ◽  
Jiaxiong Fang ◽  
Xiumei shao ◽  
Hengjing Tang ◽  
...  

1990 ◽  
Vol 216 ◽  
Author(s):  
S.M. Johnson ◽  
J.B. James ◽  
W.L. Ahlgren ◽  
W.J. Hamilton ◽  
M. Ray ◽  
...  

ABSTRACTThe structural properties of LPE-grown HgCdTe on heteroepitaxial MOCVD-grown CdZnTe/GaAs/Si substrates were evaluated using high-resolution x-ray diffraction techniques and TEM. Large tilts {up to 4°} between CdZnTe layers and GaAs/Si substrates are a general characteristic of this heteroepitaxial system and are are attributed to the interaction of closely spaced misfit dislocations that arrange to form a tilt boundary. Either {112}CdTe or {552}CdTe can be grown on {112}GaAs/Si; the {552} was shown to result from a first-order twinning operation of {112}. Lamnella {111} microtwins in {111}CdZnTe/{100}GaAs/Si substrates, measured by x-ray techniques, are not readily propagated into the LPE-grown HgCdTe layer. The x-ray FWHM of the LPE HgCdTe is typically at least a factor of two lower than that of the Si-based substrate from annealing and due to the increased thickness of the layer; both mechanisms promote dislocation interaction and annihilation. High performance MWIR and LWIR HgCdTe 128×128 hybrid focal plane arrays were fabricated on these Si-based substrates. An array average of ROAj = 17.8 ohmcm2 for a cutoff wavelength of 10.8 μm at 78K was demonstrated.


2009 ◽  
Vol 52 (6) ◽  
pp. 348-352 ◽  
Author(s):  
Cory J. Hill ◽  
Alexander Soibel ◽  
Sam A. Keo ◽  
Jason M. Mumolo ◽  
David Z. Ting ◽  
...  

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