scholarly journals Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD

2010 ◽  
Author(s):  
M. Buegler ◽  
S. Gamage ◽  
R. Atalay ◽  
J. Wang ◽  
I. Senevirathna ◽  
...  
Keyword(s):  
High Pressure ◽  
Growth Temperature ◽  
Temperature Relation ◽  
Reactor Pressure

Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2059-2062 ◽  
Author(s):  
Max Buegler ◽  
Sampath Gamage ◽  
R. Atalay ◽  
J. Wang ◽  
M. K. I. Senevirathna ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Temperature ◽  
Rate Dependency ◽  
Temperature And Growth ◽  
Reactor Pressure

Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers

2004 ◽  
Vol 267 (1-2) ◽  
pp. 67-73 ◽  
Author(s):  
Hyung Koun Cho ◽  
Kyu Han Lee ◽  
Sun Woon Kim ◽  
Keun Seop Park ◽  
Yong-Hoon Cho ◽  
...  
Keyword(s):  
Optical Properties ◽  
Growth Temperature ◽  
Reactor Pressure

Facet-control in selective area growth (SAG) of a-plane GaN by MOVPE

2009 ◽  
Vol 1202 ◽  
Author(s):  
Bei Ma ◽  
Reina Miyagawa ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu
Keyword(s):  
Growth Rate ◽  
Cross Section ◽  
Growth Temperature ◽  
Selective Area Growth ◽  
Key Technology ◽  
Selective Area ◽  
Area Growth ◽  
Vertical Growth Rate ◽  
Lateral Growth Rate ◽  
Reactor Pressure

AbstractSelective area growth (SAG) of a-plane GaN grown on r-plane sapphire with a stripe orientation along <1-100> was investigated. The key technology of facet-control is optimizing the growth temperature and the reactor pressure. Our experiments reveal that the growth temperature determined facet form: in samples grown at 1000 °C, the structure consists of {11-22}and (000-1); with increasing growth temperature to 1050 °C, the area of {11-22} facet gradually decreases, and two new planes, (0001) and {11-20} facets form; eventually, in samples grown at 1000 oC, the {11-22} facet completely disappears, (0001) and {11-20} facet continue to increase to form a rectangle cross-section. The reactor pressure determines the ratio of the lateral growth rate and the vertical growth rate: with reactor pressure decreasing from 500 torr to 100 torr, the rectangle structure gradually decreases the height and increases the width, and the volume nearly keeps constant.

Quasi-Thermodynamic Analysis of Metalorganic Vapor Phase Epitaxy of GaN

1997 ◽  
Vol 468 ◽  
Author(s):  
Shukun Duan ◽  
Dacheng Lu
Keyword(s):  
Phase Diagram ◽  
Phase Diagrams ◽  
Thermodynamic Analysis ◽  
Vapor Phase ◽  
Condensed Phase ◽  
Growth Temperature ◽  
Vapor Interface ◽  
Interface Phase ◽  
Movpe Growth ◽  
Reactor Pressure

ABSTRACTA thermodynamic analysis of GaN grown by MOVPE has been proposed based on quasi-thermodynamic equilibrium established on the solid-vapor interface. Phase diagrams for the MOVPE growth of GaN using TEGa and NH3 has been calculated. The phase diagram is consists of four phases regions: the region for single condensed phase of GaN, the region for double condensed phase of GaN (s) +Ga(l), the etching region with Ga droplets and the etching region without Ga droplets. The effect of growth temperature, reactor pressure, content of carrier gas, deposition ratio of NH3 and V/III ratio upon growth of GaN using MOVPE has been studied.

Growth-Temperature Relation for Young-Of-The-Year Ruffe

1993 ◽  
Vol 19 (3) ◽  
pp. 630-633 ◽  
Author(s):  
Thomas A. Edsall ◽  
James H. Selgeby ◽  
Timothy J. DeSorcie ◽  
John R.P. French
Keyword(s):  
Growth Temperature ◽  
Temperature Relation ◽  
Young Of The Year

CO2 photoconversion to fuels under high pressure: effect of TiO2 phase and of unconventional reaction conditions

2015 ◽  
Vol 5 (9) ◽  
pp. 4481-4487 ◽  
Author(s):  
I. Rossetti ◽  
A. Villa ◽  
M. Compagnoni ◽  
L. Prati ◽  
G. Ramis ◽  
...  
Keyword(s):  
High Pressure ◽  
Pressure Effect ◽  
Reaction Conditions ◽  
Empty Triangles ◽  
Tio2 Phase ◽  
Reactor Pressure ◽  
High Pressure Effect

Effect of CO2 saturation and reactor pressure on H2 (full triangles) and CH4 (circles) productivity at pH = 11.4, T = 65 °C. H2 productivity (empty triangles) at pH 5.5, T = 65 °C. Sample 0.1 wt% Au/P25.

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