Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2059-2062 ◽  
Author(s):  
Max Buegler ◽  
Sampath Gamage ◽  
R. Atalay ◽  
J. Wang ◽  
M. K. I. Senevirathna ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Temperature ◽  
Rate Dependency ◽  
Temperature And Growth ◽  
Reactor Pressure

The Effect of Substrate Annealing on Epitaxial Growth in Mbe—Grown Silicon on Sapphire.

1988 ◽  
Vol 116 ◽  
Author(s):  
Joseph G. Pellegrino ◽  
Eliezer D. Richmond ◽  
Mark F. Twigg
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Temperature And Growth ◽  
Identical Series ◽  
Substrate Annealing ◽  
Deposition Substrate ◽  
Anneal Time

We have continued our investigation1 of the effects of pre—deposition substrate annealing for the case of MBE grown silicon on sapphire. Three identical series of samples were grown with film thicknesses ranging between 65 and 1500 angstroms. Each series of samples was grown upon sapphire which had been annealed at either 1450ºC, 1300ºC, or 900ºC. The growth temperature and growth rate were the same for each series. The anneal time for each sample was 30 minutes.

Facet-control in selective area growth (SAG) of a-plane GaN by MOVPE

2009 ◽  
Vol 1202 ◽  
Author(s):  
Bei Ma ◽  
Reina Miyagawa ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu
Keyword(s):  
Growth Rate ◽  
Cross Section ◽  
Growth Temperature ◽  
Selective Area Growth ◽  
Key Technology ◽  
Selective Area ◽  
Area Growth ◽  
Vertical Growth Rate ◽  
Lateral Growth Rate ◽  
Reactor Pressure

AbstractSelective area growth (SAG) of a-plane GaN grown on r-plane sapphire with a stripe orientation along <1-100> was investigated. The key technology of facet-control is optimizing the growth temperature and the reactor pressure. Our experiments reveal that the growth temperature determined facet form: in samples grown at 1000 °C, the structure consists of {11-22}and (000-1); with increasing growth temperature to 1050 °C, the area of {11-22} facet gradually decreases, and two new planes, (0001) and {11-20} facets form; eventually, in samples grown at 1000 oC, the {11-22} facet completely disappears, (0001) and {11-20} facet continue to increase to form a rectangle cross-section. The reactor pressure determines the ratio of the lateral growth rate and the vertical growth rate: with reactor pressure decreasing from 500 torr to 100 torr, the rectangle structure gradually decreases the height and increases the width, and the volume nearly keeps constant.

The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 229-232 ◽  
Author(s):  
Wei Yu Chen ◽  
Han Chieh Ho ◽  
Po Fei Yang ◽  
Liang Choo Hsia
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Parameters ◽  
Lower Surface ◽  
Ratio Condition ◽  
Background Doping ◽  
Good Uniformity ◽  
Temperature And Growth ◽  
The Relationship

In this study, different parameters of 4H-SiC epitaxial growth were used to investigate the influence on surface pits density. It was found that the density of surface pits can be reduced significantly at lower C/Si ratio condition but doping uniformity became worse simultaneously. The background doping was higher than 2E15 cm-3 when C/Si ratio was lower than 1.0. Influences of growth temperature and growth rate are also discussed. The lower surface pits density 4H-SiC epilayer with good uniformity (s/mean below 2%) can be realized during optimal condition.

Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes

2006 ◽  
Vol 35 (4) ◽  
pp. 587-591 ◽  
Author(s):  
Wonseok Lee ◽  
Jae Limb ◽  
Jae-Hyun Ryou ◽  
Dongwon Yoo ◽  
Theodore Chung ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Temperature ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
Temperature And Growth

Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate

2004 ◽  
Vol 457-460 ◽  
pp. 1537-1540 ◽  
Author(s):  
Boris M. Epelbaum ◽  
Matthias Bickermann ◽  
Albrecht Winnacker
Keyword(s):  
Growth Rate ◽  
Process Temperature ◽  
Temperature And Growth ◽  
Sublimation Growth

scholarly journals Growth of GaN from elemental Gallium and Ammonia via Modified Sandwich Growth Technique

2004 ◽  
Vol 831 ◽  
Author(s):  
E. Berkman ◽  
R. Collazo ◽  
R. Schlesser ◽  
Z. Sitar
Keyword(s):  
Growth Rate ◽  
Gas Flow ◽  
Transport Model ◽  
Theoretical Calculations ◽  
Substrate Surface ◽  
Maximum Growth ◽  
Direct Reaction ◽  
Pure Nitrogen ◽  
Flow Rates ◽  
Reactor Pressure

ABSTRACTGallium nitride (GaN) films were grown on (0001) sapphire substrates at 1050°C by controlled evaporation of gallium (Ga) metal and reaction with ammonia (NH3) at a total reactor pressure of 800 Torr. Pure nitrogen (N2) was flowed directly above the molten Ga source to prevented direct reaction between the molten Ga and ammonia, which causes Ga spattering and GaN crust formation. At the same time, this substantially enhanced the Ga transport to the substrate. A simple mass-transport model based on total reactor pressure, gas flow rates and source temperature was developed and verified. The theoretical calculations and growth rate measurements at different ammonia flow rates and reactor pressures showed that the maximum growth rate was controlled by transport of both Ga species and reactive ammonia to the substrate surface.

scholarly journals Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD

2010 ◽  
Author(s):  
M. Buegler ◽  
S. Gamage ◽  
R. Atalay ◽  
J. Wang ◽  
I. Senevirathna ◽  
...  
Keyword(s):  
High Pressure ◽  
Growth Temperature ◽  
Temperature Relation ◽  
Reactor Pressure
Sign in / Sign up

Export Citation Format

Share Document