Leakage current and performance loss of thin film solar modules

2010 ◽  
Author(s):  
Mario Gossla ◽  
Thomas Hälker ◽  
Stefan Krull ◽  
Fabia Rakusa ◽  
Florian Roth ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Performance Loss ◽  
And Performance

Linguistic Competence in Aphasia

2008 ◽  
Vol 17 (3) ◽  
pp. 87-92
Author(s):  
Leonard L. LaPointe
Keyword(s):  
Language Use ◽  
Linguistic Competence ◽  
Careful Study ◽  
Feral Children ◽  
Performance Factors ◽  
Performance Loss ◽  
Linguistic Rules ◽  
Communication Goals ◽  
Aphasia Treatment ◽  
And Performance

Abstract Loss of implicit linguistic competence assumes a loss of linguistic rules, necessary linguistic computations, or representations. In aphasia, the inherent neurological damage is frequently assumed by some to be a loss of implicit linguistic competence that has damaged or wiped out neural centers or pathways that are necessary for maintenance of the language rules and representations needed to communicate. Not everyone agrees with this view of language use in aphasia. The measurement of implicit language competence, although apparently necessary and satisfying for theoretic linguistics, is complexly interwoven with performance factors. Transience, stimulability, and variability in aphasia language use provide evidence for an access deficit model that supports performance loss. Advances in understanding linguistic competence and performance may be informed by careful study of bilingual language acquisition and loss, the language of savants, the language of feral children, and advances in neuroimaging. Social models of aphasia treatment, coupled with an access deficit view of aphasia, can salve our restless minds and allow pursuit of maximum interactive communication goals even without a comfortable explanation of implicit linguistic competence in aphasia.

Leakage current models of thin film silicon-on-insulator devices

1998 ◽  
Vol 72 (10) ◽  
pp. 1199-1201 ◽  
Author(s):  
Hank Shin ◽  
Stella Hong ◽  
Tom Wetteroth ◽  
Syd R. Wilson ◽  
Dieter K. Schroder
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Silicon On Insulator ◽  
Thin Film Silicon

Fabrication and Performance Investigation of Karma Alloy Thin Film Strain Gauge

2021 ◽  
Author(s):  
Peng Lei ◽  
Congchun Zhang ◽  
Yawen Pang ◽  
Shenyong Yang ◽  
Meiju Zhang
Keyword(s):  
Thin Film ◽  
Strain Gauge ◽  
Alloy Thin Film ◽  
And Performance

Development and performance of a rechargeable thin-film solid-state microbattery

1995 ◽  
Vol 54 (1) ◽  
pp. 63-67 ◽  
Author(s):  
Steven D. Jones ◽  
James R. Akridge
Keyword(s):  
Thin Film ◽  
Solid State ◽  
And Performance

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

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