Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures

2010 ◽  
Author(s):  
Stefan P. Svensson ◽  
Dmitry Donetsky ◽  
Ding Wang ◽  
Patrick Maloney ◽  
Gregory Belenky
Keyword(s):  
Carrier Lifetime ◽  
Lifetime Measurements ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Superlattice Structures

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

2009 ◽  
Vol 95 (21) ◽  
pp. 212104 ◽  
Author(s):  
Dmitry Donetsky ◽  
Stefan P. Svensson ◽  
Leonid E. Vorobjev ◽  
Gregory Belenky
Keyword(s):  
Carrier Lifetime ◽  
Lifetime Measurements ◽  
Strained Layer ◽  
Short Period ◽  
Strained Layer Superlattice ◽  
Superlattice Structures

MBE growth of Sb-based type-II strained layer superlattice structures on multiwafer production reactors

2010 ◽  
Author(s):  
Dmitri Lubyshev ◽  
Joel M. Fastenau ◽  
Xing Gu ◽  
Amy W. K. Liu ◽  
John Prineas ◽  
...  
Keyword(s):  
Type Ii ◽  
Mbe Growth ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Superlattice Structures

Planar dechanneling studies of strained-layer superlattice structures

1983 ◽  
Vol 218 (1-3) ◽  
pp. 81-89 ◽  
Author(s):  
W.K. Chu ◽  
J.A. Ellison ◽  
S.T. Picraux ◽  
R.M. Biefeld ◽  
G.C. Osbourn
Keyword(s):  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Superlattice Structures

Deformation of Small Volumes of Material Studied Using Strained-Layer Superlattice Structures

2003 ◽  
Vol 778 ◽  
Author(s):  
K.M.Y. P'ng ◽  
A.J. Bushby ◽  
D.J. Dunstan
Keyword(s):  
Yield Stress ◽  
Finite Volume ◽  
Internal Stresses ◽  
Strained Layer ◽  
Initial Yield Stress ◽  
Semiconductor Superlattice ◽  
Initial Yield ◽  
Strained Layer Superlattice ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

AbstractMechanical studies of semiconductor superlattices have shown that the onset of plastic deformation under an inhomogeneous stress is a process that takes place simultaneously across a finite volume of the order of a micron across. The ability to incorporate known internal stresses, and to vary the stress and thickness of individual layers in a semiconductor superlattice, is a very powerful tool, opening up new possibilities for investigations that cannot be achieved by varying external stresses on a specimen that is sensibly homogeneous. In this way, from the initial yield stress of single-crystal strained-layer superlattices under indentation, we demonstrated a new criterion, of which the key feature is that it is to be averaged over a finite volume. Here we show that designing samples with individual layers in bands to form low yield-stress material within the structure can give information about the size and position of the initial yield volume.

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