Amorphous silicon p-i-n photodetector with Frisch grid for high-speed medical imaging

2010 ◽  
Author(s):  
Nicholas Allec ◽  
Amir H. Goldan ◽  
Kai Wang ◽  
Feng Chen ◽  
Karim S. Karim
1983 ◽  
Vol 43 (7) ◽  
pp. 669-671 ◽  
Author(s):  
H. C. Webber ◽  
A. G. Cullis ◽  
N. G. Chew

1998 ◽  
Vol 45 (9) ◽  
pp. 2085-2088 ◽  
Author(s):  
Jyh-Jier Ho ◽  
Y.K. Fang ◽  
Kun-Hsien Wu ◽  
W.T. Hsieh ◽  
S.C. Huang ◽  
...  

2016 ◽  
Vol 36 (9) ◽  
pp. 0914002
Author(s):  
吴超 Wu Chao ◽  
唐霞辉 Tang Xiahui ◽  
秦应雄 Qin Yingxiong ◽  
王炜 Wang Wei ◽  
王振 Wang Zhen

1994 ◽  
Vol 336 ◽  
Author(s):  
R. A. Street ◽  
X. D. Wu ◽  
R. Weisfield ◽  
S. Nelson ◽  
P. Nylen

ABSTRACTWe describe the performance of an amorphous silicon imaging system designed for high speed (>10 frames/sec) scanning of a document. The system comprises a new page-sized sensor array with 1536×1920 pixels, an illumination source, and the readout electronics. With appropriate color filters, one can achieve color imaging of a document without the registration problems associated with linear scanners. We describe the color imaging properties and discuss how the color response, sensitivity and uniformity depend on the properties of the amorphous silicon sensors.


2005 ◽  
Author(s):  
Y. Alsafadi ◽  
K.M. McNeill ◽  
R. Martinez
Keyword(s):  

1982 ◽  
Vol 21 (Part 1, No. 11) ◽  
pp. 1559-1565 ◽  
Author(s):  
Katsumi Murase ◽  
Yoshihito Amemiya ◽  
Yoshihiko Mizushima

1985 ◽  
Vol 54 ◽  
Author(s):  
C. Y. Chang ◽  
B. S. Wu ◽  
Y. K. Fang ◽  
R. H. Lee

ABSTRACTAn n+ /i/p /i/n amorphous silicon bipolar transistor has been successfully fabricated with a current gain of 12 and a response speed of 30 yS This new structure of bipolar transistor has a very thin base (200Å), therefore, high gain and high speed is obtainable. This device has a very promising applications as a flat panel display transistor and a phototransistor in photosensing element/array and photo coupler. Electrical and optical characteristics have been extensively investigated. Theoretical model and experimental results are plausibly in good agreement.Variation from the fundamental structure is also been developed, such as the Schottky emitter Al/i/p /i/n bipolar transistor.


Author(s):  
M. Margala ◽  
N.G. Durdle ◽  
S. Juskiw ◽  
V.J. Raso ◽  
D.L. Hill
Keyword(s):  

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