Computer simulation of high speed melting of amorphous silicon

1983 ◽  
Vol 43 (7) ◽  
pp. 669-671 ◽  
Author(s):  
H. C. Webber ◽  
A. G. Cullis ◽  
N. G. Chew
Keyword(s):  
Computer Simulation ◽  
Amorphous Silicon ◽  
High Speed

COMPUTER SIMULATION OF FLOW IN CORRUGATED CHANNEL OF PLATE HEAT EXCHANGER

2020 ◽  
pp. 51-58
Author(s):  
Л. А. Кущев ◽  
В. Н. Мелькумов ◽  
Н. Ю. Саввин
Keyword(s):  
Computer Simulation ◽  
Heat Exchanger ◽  
Heat Exchange ◽  
High Speed ◽  
Exchange Process ◽  
Plate Heat Exchanger ◽  
System Stability ◽  
Plate Heat ◽  
Corrugated Channel ◽  
Heat Exchange Process

Постановка задачи. Рассматривается теплообменный процесс, протекающий в модифицированном гофрированном межпластинном канале интенсифицированного пластинчатого теплообменного аппарата с повышенной турбулизацией теплоносителя. Необходимо разработать компьютерную модель движения теплоносителя в диапазоне скоростей 0,1-1,5 м/с и определить коэффициент турбулизации пластинчатого теплообменника. Результаты. Приведены результаты компьютерного моделирования движения теплоносителя в межпластинном гофрированном канале оригинального пластинчатого теплообменного аппарата с помощью программного комплекса Аnsys . Определены критерии устойчивости системы. Выполнено 3 D -моделирование канала, образуемого гофрированными пластинами. При исследовании процесса турбулизации были рассмотрены несколько скоростных режимов движения теплоносителя. Определен коэффициент турбулизации Tu, %. Выводы. В результате компьютерного моделирования установлено увеличение коэффициента теплопередачи К, Вт/(м ℃ ) за счет повышенной турбулизации потока, что приводит к снижению металлоемкости и уменьшению стоимости теплообменного оборудования. Statement of the problem. The heat exchange process occurring in a modified corrugated interplate channel of an intensified plate heat exchanger with an increased turbulence of the heat carrier is discussed. A computer model of the coolant movement in the speed range of 0.1-1.5 m/s is developed and the turbulence coefficient of the plate heat exchanger is determined. Results. The article presents the results of computer modeling of the coolant movement in the interplate corrugated channel of the original plate heat exchanger using the Ansys software package. The criteria of system stability are defined. 3D modeling of the channel formed by corrugated plates is performed. In the study of the process of turbulence several high-speed modes of movement of the coolant were considered. The turbulence coefficient Tu, % is determined. Conclusions. As a result of computer simulation, an increase in the heat transfer coefficient K, W/(m ℃) was found due to an increased turbulization of the flow, which leads to a decrease in metal consumption and a decrease in the cost of heat exchange equipment.

High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates

1998 ◽  
Vol 45 (9) ◽  
pp. 2085-2088 ◽  
Author(s):  
Jyh-Jier Ho ◽  
Y.K. Fang ◽  
Kun-Hsien Wu ◽  
W.T. Hsieh ◽  
S.C. Huang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Speed ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Infrared Sensors ◽  
Amorphous Silicon Germanium

Amorphous silicon p-i-n photodetector with Frisch grid for high-speed medical imaging

2010 ◽  
Author(s):  
Nicholas Allec ◽  
Amir H. Goldan ◽  
Kai Wang ◽  
Feng Chen ◽  
Karim S. Karim
Keyword(s):  
Medical Imaging ◽  
Amorphous Silicon ◽  
High Speed

Research on High-Speed Laser Scribing of Amorphous Silicon Solar Cell

2016 ◽  
Vol 36 (9) ◽  
pp. 0914002
Author(s):  
吴超 Wu Chao ◽  
唐霞辉 Tang Xiahui ◽  
秦应雄 Qin Yingxiong ◽  
王炜 Wang Wei ◽  
王振 Wang Zhen
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
High Speed ◽  
Silicon Solar Cell ◽  
Amorphous Silicon Solar Cell ◽  
Laser Scribing

Color Document Imaging with Amorphous Silicon Sensor Arrays

1994 ◽  
Vol 336 ◽  
Author(s):  
R. A. Street ◽  
X. D. Wu ◽  
R. Weisfield ◽  
S. Nelson ◽  
P. Nylen
Keyword(s):  
Amorphous Silicon ◽  
High Speed ◽  
Imaging System ◽  
Sensor Arrays ◽  
Color Imaging ◽  
Silicon Sensors ◽  
Imaging Properties ◽  
Color Filters ◽  
Illumination Source ◽  
Silicon Sensor

ABSTRACTWe describe the performance of an amorphous silicon imaging system designed for high speed (>10 frames/sec) scanning of a document. The system comprises a new page-sized sensor array with 1536×1920 pixels, an illumination source, and the readout electronics. With appropriate color filters, one can achieve color imaging of a document without the registration problems associated with linear scanners. We describe the color imaging properties and discuss how the color response, sensitivity and uniformity depend on the properties of the amorphous silicon sensors.

Amorphous Silicon-Germanium-Boron Alloy Applied to Low-Loss and High-Speed Diodes

1982 ◽  
Vol 21 (Part 1, No. 11) ◽  
pp. 1559-1565 ◽  
Author(s):  
Katsumi Murase ◽  
Yoshihito Amemiya ◽  
Yoshihiko Mizushima
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Speed ◽  
Low Loss ◽  
Amorphous Silicon Germanium

Computer Simulation of Polyester High-Speed Thermal Channel Spinning

2002 ◽  
Vol 287 (5) ◽  
pp. 330 ◽  
Author(s):  
Nanxun Huang ◽  
Xinhai Yu ◽  
Zhilian Tang ◽  
Peiming Hou ◽  
Xiaochen Xu
Keyword(s):  
Computer Simulation ◽  
High Speed

Amorphous Silicon Ultra Thin Base Bipolar Phototransistor with High Performance (β=12, τx ≤30μs)

1985 ◽  
Vol 54 ◽  
Author(s):  
C. Y. Chang ◽  
B. S. Wu ◽  
Y. K. Fang ◽  
R. H. Lee
Keyword(s):  
Amorphous Silicon ◽  
High Speed ◽  
High Performance ◽  
Response Speed ◽  
High Gain ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Flat Panel Display ◽  
Element Array ◽  
Good Agreement

ABSTRACTAn n+ /i/p /i/n amorphous silicon bipolar transistor has been successfully fabricated with a current gain of 12 and a response speed of 30 yS This new structure of bipolar transistor has a very thin base (200Å), therefore, high gain and high speed is obtainable. This device has a very promising applications as a flat panel display transistor and a phototransistor in photosensing element/array and photo coupler. Electrical and optical characteristics have been extensively investigated. Theoretical model and experimental results are plausibly in good agreement.Variation from the fundamental structure is also been developed, such as the Schottky emitter Al/i/p /i/n bipolar transistor.

Crystallization of amorphous silicon thin films: comparison between experimental and computer simulation results

2008 ◽  
Vol 43 (11) ◽  
pp. 3976-3981
Author(s):  
J. Kioseoglou ◽  
Ph. Komninou ◽  
G. P. Dimitrakopulos ◽  
I. P. Antoniades ◽  
M. K. Hatalis ◽  
...  
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Simulation Results
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