Optical properties of atomic layer deposited materials and their application in silicon waveguides

2010 ◽  
Author(s):  
Tapani Alasaarela ◽  
Jussi Hiltunen ◽  
Amit Khanna ◽  
Antti Säynätjoki ◽  
Ari Tervonen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Silicon Waveguides

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

scholarly journals W:Al2O3 Nanocomposite Thin Films with Tunable Optical Properties Prepared by Atomic Layer Deposition

2016 ◽  
Vol 120 (27) ◽  
pp. 14681-14689 ◽  
Author(s):  
Shaista Babar ◽  
Anil U. Mane ◽  
Angel Yanguas-Gil ◽  
Elham Mohimi ◽  
Richard T. Haasch ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Nanocomposite Thin Films ◽  
Tunable Optical Properties

Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate

2004 ◽  
Vol 809 ◽  
Author(s):  
Yves Chriqui ◽  
Ludovic Largeau ◽  
Gilles Patriarche ◽  
Guillaume Saint-Girons ◽  
Sophie Bouchoule ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
High Speed ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Lattice Parameter ◽  
Photoluminescence Intensity ◽  
High Quality ◽  
Light Emitting ◽  
Thermal Expansion Coefficients

ABSTRACTOne of the major challenges during recent years was to achieve the compatibility of III-V semiconductor epitaxy on silicon substrates to combine opto-electronics with high speed circuit technology. However, the growth of high quality epitaxial GaAs on Si is not straightforward due to the intrinsic differences in lattice parameters and thermal expansion coefficients of the two materials. Moreover, antiphase boundaries (APBs) appear that are disadvantageous for the fabrication of light emitting devices. Recently the successful fabrication of high quality germanium layers on exact (001) Si by chemical vapor deposition (CVD) was reported. Due to the germanium seed layer the lattice parameter is matched to the one of GaAs providing for excellent conditions for the subsequent GaAs growth. We have studied the material morphology of GaAs grown on Ge/Si PS using atomic layer epitaxy (ALE) at the interface between Ge and GaAs. We present results on the reduction of APBs and dislocation density on (001) Ge/Si PS when ALE is applied. The ALE allows the reduction of the residual dislocation density in the GaAs layers to 105 cm−2 (one order of magnitude as compared to the dislocation density of the Ge/Si PS). The optical properties are improved (ie. increased photoluminescence intensity). Using ALE, light emitting diodes based on strained InGaAs/GaAs quantum well as well as of In(Ga)As quantum dots on an exactly oriented (001) Ge/Si pseudo-substrate were fabricated and characterized.

Optical properties of crystalline Al203 thin films grown by atomic layer deposition

2005 ◽  
Author(s):  
Jaan Aarik ◽  
Aarne Kasikov ◽  
Marco Kirm ◽  
Sven Lange ◽  
Teet Uustare ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

AB INITIO CALCULATIONS OF THE MAGNETO-OPTICAL RESPONSE OF LAYERED SYSTEMS

2002 ◽  
Vol 09 (02) ◽  
pp. 1135-1142
Author(s):  
HUBERT EBERT ◽  
ALEXANDER PERLOV ◽  
TILMANN HUHNE
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Optical Conductivity ◽  
Atomic Layer ◽  
Magnetic Multilayer ◽  
Layered Systems ◽  
Layer System ◽  
Multilayer Systems

The concept of the layer-resolved optical conductivity [Formula: see text] applied by means of a conventional band structure method is introduced. It is demonstrated that it allows a detailed discussion of the magneto-optical properties of magnetic multilayer systems. In particular it is found that the layer-projected optical conductivity [Formula: see text] of an atomic layer is influenced by only very few neighboring layers. This property can be exploited within the Baukasten principle, which aims to predict the magneto-optical properties of a complex layer system from the properties calculated for a closely related but simpler one.

Electrical and Optical Properties of ZnO Processed by Atomic Layer Deposition in Inverted Polymer Solar Cells

2010 ◽  
Vol 114 (48) ◽  
pp. 20713-20718 ◽  
Author(s):  
Hyeunseok Cheun ◽  
Canek Fuentes-Hernandez ◽  
Yinhua Zhou ◽  
William J. Potscavage ◽  
Sung-Jin Kim ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Polymer Solar Cells ◽  
Atomic Layer ◽  
Electrical And Optical Properties ◽  
Layer Deposition ◽  
Inverted Polymer Solar Cells

Optical properties of ZnSeZnTe strained layer superlattices prepared by atomic layer epitaxy

1990 ◽  
Vol 101 (1-4) ◽  
pp. 81-85 ◽  
Author(s):  
Yasushi Takemura ◽  
Shiro Dosho ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Strained Layer ◽  
Strained Layer Superlattices
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