Study on fabrication technology of silicon-based silica array waveguide grating

2009 ◽  
Author(s):  
Yanjun Sun ◽  
Lianhe Dong ◽  
Yanbing Leng
1997 ◽  
Vol 33 (7) ◽  
pp. 592 ◽  
Author(s):  
Haifeng Li ◽  
Chau-Han Lee ◽  
Wenhua Lin ◽  
S. Didde ◽  
Ying-Jui Chen ◽  
...  

2018 ◽  
Vol 25 (6) ◽  
pp. 2259-2265 ◽  
Author(s):  
P. Raknoi ◽  
S. Chiangga ◽  
I. S. Amiri ◽  
P. Yupapin

2014 ◽  
Vol 538 ◽  
pp. 490-493 ◽  
Author(s):  
Ping Li ◽  
Zhen Ping Lan ◽  
Yu Ru Wang ◽  
Huan Lin Lv ◽  
Nian Yu Zou

The simulation diagram of WDM-PON is proposed, utilizing DFB laser diodes as light sources, array waveguide grating as multiplexer for signals’ split and amplifiers as gain generator, respectively, to realize networking for both sending and receiving units. WDM-PON system with 128 branches service signals and transmission rate of 210Gb/s is finally simulated and the system performances are analyzed and discussed.


2010 ◽  
Vol 7 (2) ◽  
pp. 164-167 ◽  
Author(s):  
H. Ahmad ◽  
M.Z. Zulkifli ◽  
A.A. Latif ◽  
S.W. Harun

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Cocorullo ◽  
F. G. Della Corte ◽  
R. De Rosa ◽  
I. Rendina ◽  
A. Rubino ◽  
...  

AbstractThis paper reports about the fabrication and experimental test of an interferometric light intensity modulator integrated in a low loss (0.7 dB/cm), amorphous silicon based waveguide. It measures approximately 1 mm in length, while its cross section is 30-μm-wide and 3-μm-high. The device, which exploits the strong thermo-optic effect in thin film a-Si for its operation, is designed for application at the infrared wavelengths of 1.3 and 1.55 μm. The measured maximum operating on-off switching frequency of the device is 600 kHz. The very simple fabrication technology involves maximum process temperatures of 230 °C, and is therefore compatible with the standard microelectronic technology. This offers a new opportunity for the integration of optical and electronic functions on the same substrate.


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