Total dose, displacement damage, and single event effects in the radiation hardened CMOS APS HAS2

2009 ◽  
Author(s):  
Dirk Van Aken ◽  
Dominique Hervé ◽  
Matthieu Beaumel
Keyword(s):  
Total Dose ◽  
Single Event ◽  
Displacement Damage ◽  
Single Event Effects ◽  
Radiation Hardened

Total-dose and single-event effects in DC/DC converter control circuitry

2003 ◽  
Vol 50 (6) ◽  
pp. 1867-1872 ◽  
Author(s):  
P.C. Adell ◽  
R.D. Schrimpf ◽  
W.T. Holman ◽  
J. Boch ◽  
J. Stacey ◽  
...  
Keyword(s):  
Total Dose ◽  
Single Event ◽  
Single Event Effects

scholarly journals CMOS IC radiation hardening by design

2014 ◽  
Vol 27 (2) ◽  
pp. 251-258 ◽  
Author(s):  
Alessandra Camplani ◽  
Seyedruhollah Shojaii ◽  
Hitesh Shrimali ◽  
Alberto Stabile ◽  
Valentino Liberali
Keyword(s):  
Integrated Circuits ◽  
Total Dose ◽  
Radiation Hardening ◽  
Single Event ◽  
Silicon Area ◽  
Single Event Effects ◽  
Main Drawback ◽  
Conventional Design ◽  
Cmos Ic ◽  
Radiation Hardening By Design

Design techniques for radiation hardening of integrated circuits in commercial CMOS technologies are presented. Circuits designed with the proposed approaches are more tolerant to both total dose and to single event effects. The main drawback of the techniques for radiation hardening by design is the increase of silicon area, compared with a conventional design.

Total dose and displacement damage effects in a radiation-hardened CMOS APS

2003 ◽  
Vol 50 (1) ◽  
pp. 84-90 ◽  
Author(s):  
J. Bogaerts ◽  
B. Dierickx ◽  
G. Meynants ◽  
D. Uwaerts
Keyword(s):  
Total Dose ◽  
Displacement Damage ◽  
Radiation Hardened
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