Resonant tunneling diode-laser diode optoelectronic integrated circuit operating as a voltage controlled oscillator

2009 ◽  
Author(s):  
C. N. Ironside ◽  
J.M. L. Figueiredo ◽  
B. Romeira ◽  
T. J. Slight ◽  
L. Wang ◽  
...  
Keyword(s):  
Diode Laser ◽  
Laser Diode ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Voltage Controlled Oscillator ◽  
Tunneling Diode

Active mode locking of a diode laser by a resonant tunneling diode

1994 ◽  
Vol 64 (23) ◽  
pp. 3095-3097 ◽  
Author(s):  
E. Grumann ◽  
J. E. Golub ◽  
M. Matusovsky ◽  
M. Rosenbluh
Keyword(s):  
Diode Laser ◽  
Resonant Tunneling ◽  
Mode Locking ◽  
Resonant Tunneling Diode ◽  
Active Mode ◽  
Tunneling Diode

scholarly journals Two-Element Tapered Slot Antenna Array for Terahertz Resonant Tunneling Diode Oscillators

2014 ◽  
Vol 2014 ◽  
pp. 1-8
Author(s):  
Jianxiong Li ◽  
Yunxiang Li ◽  
Weiguang Shi ◽  
Haolin Jiang ◽  
Luhong Mao
Keyword(s):  
Antenna Array ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Mutual Coupling ◽  
Beam Width ◽  
High Gain ◽  
Resonant Tunneling Diode ◽  
Slot Antenna ◽  
Tunneling Diode ◽  
Metal Insulator Metal

Two-element tapered slot antenna (TSA) array for terahertz (THz) resonant tunneling diode (RTD) oscillators is proposed in this paper. The proposed TSA array has the advantages of both the high directivity and high gain at the horizontal direction and hence can facilitate the horizontal communication between the RTD oscillators and other integrated circuit chips. A MIM (metal-insulator-metal) stub with a T-shaped slot is used to reduce the mutual coupling between the TSA elements. The validity and feasibility of the proposed TSA array have been simulated and analyzed by the ANSYS/ANSOFT’s High Frequency Structure Simulator (HFSS). Detailed modeling approaches and theoretical analysis of the proposed TSA array have been fully addressed. The simulation results show that the mutual coupling between the TSA elements is reduced below −40 dB. Furthermore, at 500 GHz, the directivity, the gain, and the half power beam width (HPBW) at theE-plane of the proposed TSA array are 12.18 dB, 13.09 dB, and 61°, respectively. The proposed analytical method and achieved performance are very promising for the antenna array integrated with the RTD oscillators at the THz frequency and could pave the way to the design of the THz antenna array for the RTD oscillators.

Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Spin Polarized
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