MgZnO:P homoepitaxy by pulsed laser deposition: pseudomorphic layer-by-layer growth and high electron mobility

2009 ◽  
Author(s):  
M. Lorenz ◽  
M. Brandt ◽  
G. Wagner ◽  
H. Hochmuth ◽  
G. Zimmermann ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Electron Mobility ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Layer By Layer ◽  
High Electron ◽  
High Electron Mobility

High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

2003 ◽  
Vol 82 (22) ◽  
pp. 3901-3903 ◽  
Author(s):  
E. M. Kaidashev ◽  
M. Lorenz ◽  
H. von Wenckstern ◽  
A. Rahm ◽  
H.-C. Semmelhack ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electron Mobility ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
High Electron ◽  
High Electron Mobility

High electron mobility W-doped In2O3 thin films by pulsed laser deposition

2005 ◽  
Vol 87 (11) ◽  
pp. 112108 ◽  
Author(s):  
P. F. Newhouse ◽  
C.-H. Park ◽  
D. A. Keszler ◽  
J. Tate ◽  
P. S. Nyholm
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electron Mobility ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Electron ◽  
High Electron Mobility

High electron mobility of phosphorous-doped homoepitaxial ZnO thin films grown by pulsed-laser deposition

2008 ◽  
Vol 104 (1) ◽  
pp. 013708 ◽  
Author(s):  
Matthias Brandt ◽  
Holger von Wenckstern ◽  
Heidemarie Schmidt ◽  
Andreas Rahm ◽  
Gisela Biehne ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electron Mobility ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
High Electron ◽  
High Electron Mobility

Growth of CaFeOX/LaFeO3 Superlattice on SrTiO3(100) Substrates

2011 ◽  
Vol 1292 ◽  
Author(s):  
Nobuyuki Iwata ◽  
Mark Huijben ◽  
Guus Rijnders ◽  
Hiroshi Yamamoto ◽  
Dave H. A. Blank
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Growth Mode ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTThe CaFeOX(CFO) and LaFeO3(LFO) thin films as well as superlattices were fabricated on SrTiO3(100) substrates by pulsed laser deposition (PLD) method. The tetragonal LFO film grew with layer-by-layer growth mode until approximately 40 layers. In the case of CFO, initial three layers showed layer-by-layer growth, and afterward the growth mode was transferred to two layers-by-two layers (TLTL) growth mode. The RHEED oscillation was observed until the end of the growth, approximately 50nm. Orthorhombic twin CaFeO2.5 (CFO2.5) structure was obtained. However, it is expected that the initial three CFO layers are CaFeO3 (CFO3) with the valence of Fe4+. The CFO and LFO superlattice showed a step-terraces surface, and the superlattice satellite peaks in a 2θ-θ and reciprocal space mapping (RSM) x-ray diffraction (XRD) measurements, indicating that the clear interfaces were fabricated.

Growth of epitaxial β-FeSi2 thin films by pulsed laser deposition on silicon (111)

1994 ◽  
Vol 9 (11) ◽  
pp. 2733-2736 ◽  
Author(s):  
C.H. Olk ◽  
O. P. Karpenko ◽  
S. M. Yalisove ◽  
G. L. Doll ◽  
J.F. Mansfield
Keyword(s):  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Layer Growth ◽  
Laser Deposition ◽  
Electron Diffraction Data ◽  
Layer By Layer ◽  
Material System ◽  
Epitaxial Relationship

Epitaxial films of semiconducting iron disilicide (β-FeSi2) have been grown by pulsed laser deposition. We find that pulsed laser deposition creates conditions favorable to the formation of films with the smallest geometric misfit possessed by this material system. In situ reflection high energy electron diffraction results indicate a layer by layer growth of the silicide. Analysis of transmission electron diffraction data has determined that the films are single phase and that this growth method reproduces the epitaxial relationship: β-FeSi2 (001) ‖ Si(111).

High Electron Mobility W-doped In2O3 Thin Films

2005 ◽  
Vol 905 ◽  
Author(s):  
Paul F. Newhouse ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler ◽  
Janet Tate ◽  
Peter S. Nyholm
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
Room Temperature ◽  
Dopant Concentration ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
High Electron ◽  
Stabilized Zirconia ◽  
High Electron Mobility

AbstractHigh electron mobility thin films of In2−xWxO3+d (0 ≤ × ≤ 0.075) were prepared by pulsed laser deposition. The highest mobility polycrystalline and textured films show mobility >110 cm2/Vs on both amorphous SiO2 and single crystal yttria-stabilized zirconia substrates. The carrier density is in the range 1−3 × 1020 cm−3 at room temperature. The W dopant concentration for films with optimized electrical properties was x ∼ 0.03.

scholarly journals Layer-By-Layer Growth for Pulsed Laser Deposition

2002 ◽  
Vol 75 (1-2) ◽  
pp. 151-157 ◽  
Author(s):  
B. Hinnemann ◽  
F. Westerhoff ◽  
D.E. Wolf
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Layer By Layer
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