High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

2003 ◽  
Vol 82 (22) ◽  
pp. 3901-3903 ◽  
Author(s):  
E. M. Kaidashev ◽  
M. Lorenz ◽  
H. von Wenckstern ◽  
A. Rahm ◽  
H.-C. Semmelhack ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electron Mobility ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
High Electron ◽  
High Electron Mobility

High electron mobility of phosphorous-doped homoepitaxial ZnO thin films grown by pulsed-laser deposition

2008 ◽  
Vol 104 (1) ◽  
pp. 013708 ◽  
Author(s):  
Matthias Brandt ◽  
Holger von Wenckstern ◽  
Heidemarie Schmidt ◽  
Andreas Rahm ◽  
Gisela Biehne ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electron Mobility ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
High Electron ◽  
High Electron Mobility

High electron mobility W-doped In2O3 thin films by pulsed laser deposition

2005 ◽  
Vol 87 (11) ◽  
pp. 112108 ◽  
Author(s):  
P. F. Newhouse ◽  
C.-H. Park ◽  
D. A. Keszler ◽  
J. Tate ◽  
P. S. Nyholm
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electron Mobility ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Electron ◽  
High Electron Mobility

High Electron Mobility W-doped In2O3 Thin Films

2005 ◽  
Vol 905 ◽  
Author(s):  
Paul F. Newhouse ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler ◽  
Janet Tate ◽  
Peter S. Nyholm
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
Room Temperature ◽  
Dopant Concentration ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
High Electron ◽  
Stabilized Zirconia ◽  
High Electron Mobility

AbstractHigh electron mobility thin films of In2−xWxO3+d (0 ≤ × ≤ 0.075) were prepared by pulsed laser deposition. The highest mobility polycrystalline and textured films show mobility >110 cm2/Vs on both amorphous SiO2 and single crystal yttria-stabilized zirconia substrates. The carrier density is in the range 1−3 × 1020 cm−3 at room temperature. The W dopant concentration for films with optimized electrical properties was x ∼ 0.03.

Electroreflectance study of antimony doped ZnO thin films grown by pulsed laser deposition

2021 ◽  
Vol 120 ◽  
pp. 111461
Author(s):  
Sukittaya Jessadaluk ◽  
Narathon Khemasiri ◽  
Prapakorn Rattanawarinchai ◽  
Navaphun Kayunkid ◽  
Sakon Rahong ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition

2002 ◽  
Vol 420-421 ◽  
pp. 107-111 ◽  
Author(s):  
H Kim ◽  
J.S Horwitz ◽  
S.B Qadri ◽  
D.B Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

ZnO thin films on Si(1 1 1) grown by pulsed laser deposition from metallic Zn target

2006 ◽  
Vol 253 (2) ◽  
pp. 841-845 ◽  
Author(s):  
Jie Zhao ◽  
Lizhong Hu ◽  
Zhaoyang Wang ◽  
Jie Sun ◽  
Zhijun Wang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films

Role of vanadium content in ZnO thin films grown by pulsed laser deposition

2007 ◽  
Vol 254 (4) ◽  
pp. 1228-1231 ◽  
Author(s):  
M.E. Koleva ◽  
P.A. Atanasov ◽  
N.N. Nedialkov ◽  
H. Fukuoka ◽  
M. Obara
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Vanadium Content ◽  
Laser Deposition ◽  
Zno Thin Films
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