Control and reduction of immersion defectivity for yield enhancement at high volume production

2009 ◽  
Author(s):  
Katsushi Nakano ◽  
Rei Seki ◽  
Toshiyuki Sekito ◽  
Masato Yoshida ◽  
Tomoharu Fujiwara ◽  
...  
Keyword(s):  
High Volume ◽  
Yield Enhancement ◽  
High Volume Production ◽  
Volume Production

Topcoat-less resist approach for high volume production and yield enhancement of immersion lithography

2010 ◽  
Author(s):  
Katsushi Nakano ◽  
Rei Seki ◽  
Tadamasa Kawakubo ◽  
Yoshihiro Maruta ◽  
Toshiyuki Sekito ◽  
...  
Keyword(s):  
High Volume ◽  
Yield Enhancement ◽  
Immersion Lithography ◽  
High Volume Production ◽  
Volume Production

High hydrophobic topcoat approach for high volume production and yield enhancement of immersion lithography

2012 ◽  
Author(s):  
Natsuko Sagawa ◽  
Katsushi Nakano ◽  
Yuuki Ishii ◽  
Kazunori Kusabiraki ◽  
Motoyuki Shima
Keyword(s):  
High Volume ◽  
Yield Enhancement ◽  
Immersion Lithography ◽  
High Volume Production ◽  
Volume Production

scholarly journals Congener-specific partition properties of chlorinated paraffins evaluated with COSMOtherm and gas chromatographic retention indices

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jort Hammer ◽  
Hidenori Matsukami ◽  
Satoshi Endo
Keyword(s):  
Chemical Properties ◽  
High Volume ◽  
Retention Indices ◽  
Chromatographic Retention ◽  
Linear Free Energy Relationship ◽  
Linear Free Energy ◽  
Chlorinated Paraffins ◽  
Gas Chromatographic Retention Indices ◽  
High Volume Production ◽  
Volume Production

AbstractChlorinated Paraffins (CPs) are high volume production chemicals and have been found in various organisms including humans and in environmental samples from remote regions. It is thus of great importance to understand the physical–chemical properties of CPs. In this study, gas chromatographic (GC) retention indexes (RIs) of 25 CP congeners were measured on various polar and nonpolar columns to investigate the relationships between the molecular structure and the partition properties. Retention measurements show that analytical standards of individual CPs often contain several stereoisomers. RI values show that chlorination pattern have a large influence on the polarity of CPs. Single Cl substitutions (–CHCl–, –CH2Cl) generally increase polarity of CPs. However, many consecutive –CHCl– units (e.g., 1,2,3,4,5,6-C11Cl6) increase polarity less than expected from the total number of –CHCl– units. Polyparameter linear free energy relationship descriptors show that polarity difference between CP congeners can be explained by the H-bond donating properties of CPs. RI values of CP congeners were predicted using the quantum chemically based prediction tool COSMOthermX. Predicted RI values correlate well with the experimental data (R2, 0.975–0.995), indicating that COSMOthermX can be used to accurately predict the retention of CP congeners on GC columns.

High Volume Production Growth of GaAs on Silicon Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
Chris R. Ito ◽  
M. Feng ◽  
V. K. Eu ◽  
H. B. Kim
Keyword(s):  
Schottky Diodes ◽  
High Volume ◽  
Wafer Surface ◽  
Silicon Substrates ◽  
Growth Technique ◽  
Wafer Thickness ◽  
Production Growth ◽  
High Volume Production ◽  
Volume Production ◽  
P Type

ABSTRACTA high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diameter wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD material growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diameter. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-cyrstal GaAs with an average FWHMof 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was ± 4% with a wafer-to-wafer uniformity of ± 2%. Photoluminescence spectra showed Tour peaks at 1.500, 1.483, 1.464, and 1.440 ev. Schottky diodes were fabricated on the GaAs on silicon material.

Determination of transverse flexural and shear moduli of chopped carbon fiber tape-reinforced thermoplastic by vibration

2017 ◽  
Vol 52 (3) ◽  
pp. 395-404
Author(s):  
Xiuqi Lyu ◽  
Jun Takahashi ◽  
Yi Wan ◽  
Isamu Ohsawa
Keyword(s):  
Carbon Fiber ◽  
Beam Theory ◽  
Transversely Isotropic ◽  
High Volume ◽  
Bending Test ◽  
Thermoplastic Material ◽  
Shear Moduli ◽  
High Volume Production ◽  
Volume Production

Chopped carbon fiber tape-reinforced thermoplastic material is specifically developed for the high-volume production of lightweight automobiles. With excellent design processability and flexibility, the carbon fiber tape-reinforced thermoplastic material is manufactured by compressing large amounts of randomly oriented, pre-impregnated unidirectional tapes in a plane. Therefore, the carbon fiber tape-reinforced thermoplastic material presents transversely isotropic properties. Transverse shear effect along the thickness direction of carbon fiber tape-reinforced thermoplastic beam has a distinct influence on its flexural deformation. Accordingly, the Timoshenko beam theory combined with vibration frequencies was proposed to determine the set of transverse flexural and shear moduli. Meanwhile, the transverse flexural and shear moduli of carbon fiber tape-reinforced thermoplastic beam were finally determined by fitting all the first seven measured and calculated eigenfrequencies with the least squares criterion. In addition, the suggested thickness to length ratio for the 3-point bending test and Euler–Bernoulli model was given.

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