Characterization of bias induced metastability of amorphous silicon thin film transistor based passive pixel sensor switch and its impact on biomedical x-ray imaging application

2009 ◽  
Author(s):  
Afrin Sultana ◽  
N. Safavian ◽  
M. H. Izadi ◽  
K. S. Karim ◽  
J. A. Rowlands
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
X Ray ◽  
X Ray Imaging ◽  
Imaging Application

Integration and characterization of amorphous silicon thin-film transistor and Mo-tips for active-matrix cathodes

2002 ◽  
Vol 49 (7) ◽  
pp. 1136-1142
Author(s):  
Do-Hyung Kim ◽  
Yoon-Ho Song ◽  
Young-Rae Cho ◽  
Chi-Sun Hwang ◽  
Bong-Chul Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Active Matrix

Amorphous Silicon Photodiode-Thin Film Transistor Image Sensor with Diode on Top Structure

1997 ◽  
Vol 467 ◽  
Author(s):  
M J Powell ◽  
C Glasse ◽  
I D French ◽  
A R Franklin ◽  
J R Hughes ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Image Sensor ◽  
Sensor Technology ◽  
Noise Performance ◽  
Silicon Thin Film ◽  
Silicon Photodiode ◽  
Insulating Layer ◽  
X Ray

ABSTRACTWe have developed a new amorphous silicon image sensor technology using a matrix array of amorphous silicon thin film transistors and photodiodes, where the amorphous silicon nip photodiode is fabricated on top of a thick insulating layer, on top of the thin film transistor array. We call this ‘diode on top’ technology or DOTTY. The active diode area can be as high as 93%, compared to 50% for our conventional photodiode-TFT technology. This leads to a higher signal to noise performance, which is important for medical X-ray applications.

Fluoroscopic x-ray imaging with amorphous silicon thin-film arrays

1994 ◽  
Author(s):  
Ulrich W. Schiebel ◽  
Norbert Conrads ◽  
Norbert Jung ◽  
Martin Weibrecht ◽  
Herfried K. Wieczorek ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Silicon Thin Film ◽  
X Ray ◽  
X Ray Imaging

Dynamic x-ray imaging system based on an amorphous silicon thin-film array

1998 ◽  
Author(s):  
Norbert Jung ◽  
P. L. Alving ◽  
Falko Busse ◽  
Norbert Conrads ◽  
Henk J. Meulenbrugge ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Imaging System ◽  
Silicon Thin Film ◽  
X Ray ◽  
X Ray Imaging

Amorphous-silicon thin film transistor with two-step exposure process

2000 ◽  
Author(s):  
Pi-Fu Chen ◽  
Jr-Hong Chen ◽  
Dou-I Chen ◽  
HsixgJu Sung ◽  
June-Wei Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Exposure Process

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With ${\rm n}^{+}$ Amorphous-Silicon Contacts

2009 ◽  
Vol 30 (1) ◽  
pp. 36-38 ◽  
Author(s):  
J. H. Oh ◽  
D. H. Kang ◽  
W. H. Park ◽  
J. Jang ◽  
Y. J. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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