InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix

2009 ◽  
Author(s):  
K. D. Moiseev ◽  
M. P. Mikhailova ◽  
Ya. A. Parkhomenko ◽  
E. V. Gushchina ◽  
S. S. Kizhaev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Narrow Gap ◽  
Quantum Rings

Photoluminescence studies of GaAs quantum dots and quantum rings

2011 ◽  
Vol 8 (9) ◽  
pp. 2826-2829 ◽  
Author(s):  
Ákos Nemcsics ◽  
János Balázs ◽  
Bálint Pődör ◽  
János Makai ◽  
Andrea Stemmann
Keyword(s):  
Quantum Dots ◽  
Quantum Rings ◽  
Photoluminescence Studies

Spin-orbit and electronic interactions in narrow-gap quantum dots

2004 ◽  
Vol 70 (20) ◽  
Author(s):  
C. F. Destefani ◽  
Sergio E. Ulloa ◽  
G. E. Marques
Keyword(s):  
Quantum Dots ◽  
Spin Orbit ◽  
Narrow Gap ◽  
Electronic Interactions

InSb quantum dots and quantum rings on InAs-rich surface

2009 ◽  
Vol 256 (2) ◽  
pp. 435-437 ◽  
Author(s):  
K.D. Moiseev ◽  
Ya.P. Parkhomenko ◽  
E.A. Gushchina ◽  
S.S. Kizhaev ◽  
M.P. Mikhailova
Keyword(s):  
Quantum Dots ◽  
Quantum Rings

Fabrication and Luminescence of Etched Quantum Rings and Vertically Coupled Dots

1995 ◽  
Vol 406 ◽  
Author(s):  
G. E. Philippa ◽  
J. A. Mejia Galeana ◽  
C. Cassou ◽  
P. D. Wang ◽  
C. Guasch ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Beam ◽  
Electric Field ◽  
Emission Spectrum ◽  
Electron Beam Lithography ◽  
Electrical Contacts ◽  
Outer Diameter ◽  
Quantum Rings ◽  
Order Of Magnitude ◽  
Linewidth Broadening

AbstractThe fabrication of GaAs-GaAIAs coupled quantum dots and of quantum rings using electron beam lithography and dry etching is described. Coupled dots of physical diameter of 500 and 250 nm were fabricated and processed with top electrical contacts to apply an electric field. We show that the emission spectrum of coupled dots is modified by the electric field. Quantum rings of 400 nm outer diameter and wall thickness of 25 nm were fabricated. The emission spectrum from rings showed the quantum well emission shifted to higher energies and although its intensity decreased by about one order of magnitude there was little linewidth broadening.

SnTe Nanocrystals:  A New Example of Narrow-Gap Semiconductor Quantum Dots

2007 ◽  
Vol 129 (37) ◽  
pp. 11354-11355 ◽  
Author(s):  
Maksym V. Kovalenko ◽  
Wolfgang Heiss ◽  
Elena V. Shevchenko ◽  
Jong-Soo Lee ◽  
Harald Schwinghammer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots ◽  
Narrow Gap

Type-II GaSb/GaAs Nanostructures Grown by Droplet Epitaxy with Various Ga Amounts

2015 ◽  
Vol 1131 ◽  
pp. 60-63 ◽  
Author(s):  
Maetee Kunrugsa ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Optical Properties ◽  
Droplet Epitaxy ◽  
Formation Mechanisms ◽  
Type Ii ◽  
Quantum Rings ◽  
Force Microscopy ◽  
Atomic Force

We study the GaSb/GaAs nanostructures (NSs) grown by droplet epitaxy technique with various Ga amounts. Ga amount deposited on the GaAs (001) substrate was varied between 3-5 ML to form the different size and density of liquid Ga droplets. The Sb flux was subsequently irradiated to crystallize the droplets. Morphology of GaSb NSs was investigated by atomic force microscopy (AFM). Quantum rings were obtained after crystallizing 3-ML Ga droplets, whereas some kind of quantum dots were formed after crystallizing 4-and 5-ML Ga droplets. The formation mechanisms leading to the different structure are discussed. The photoluminescence (PL) measurement was performed to examine the optical properties of GaSb/GaAs NSs.

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