Customized nanostructures MBE growth: from quantum dots to quantum rings

2003 ◽  
Author(s):  
D. Granados ◽  
L. Gonzalez ◽  
Y. Gonzalez ◽  
J.M. Garcia
Keyword(s):  
Quantum Dots ◽  
Mbe Growth ◽  
Quantum Rings

Photoluminescence studies of GaAs quantum dots and quantum rings

2011 ◽  
Vol 8 (9) ◽  
pp. 2826-2829 ◽  
Author(s):  
Ákos Nemcsics ◽  
János Balázs ◽  
Bálint Pődör ◽  
János Makai ◽  
Andrea Stemmann
Keyword(s):  
Quantum Dots ◽  
Quantum Rings ◽  
Photoluminescence Studies

MBE growth of In(Ga)As quantum dots for entangled light emission

2009 ◽  
Vol 311 (7) ◽  
pp. 1811-1814 ◽  
Author(s):  
C.A. Nicoll ◽  
C.L. Salter ◽  
R.M. Stevenson ◽  
A.J. Hudson ◽  
P. Atkinson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emission ◽  
Mbe Growth

Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers

1999 ◽  
Vol 201-202 ◽  
pp. 1117-1120 ◽  
Author(s):  
A.R Kovsh ◽  
A.E Zhukov ◽  
A.Yu Egorov ◽  
V.M Ustinov ◽  
Yu.M Shernyakov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Coupled Quantum Dots ◽  
Mbe Growth ◽  
Injection Lasers

RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Hashimoto ◽  
Naohiro Kikukawa ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Lattice Relaxation ◽  
Radio Frequency Plasma ◽  
Mbe Growth ◽  
Frequency Plasma ◽  
Nominal Coverage

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

InSb quantum dots and quantum rings on InAs-rich surface

2009 ◽  
Vol 256 (2) ◽  
pp. 435-437 ◽  
Author(s):  
K.D. Moiseev ◽  
Ya.P. Parkhomenko ◽  
E.A. Gushchina ◽  
S.S. Kizhaev ◽  
M.P. Mikhailova
Keyword(s):  
Quantum Dots ◽  
Quantum Rings

Fabrication and Luminescence of Etched Quantum Rings and Vertically Coupled Dots

1995 ◽  
Vol 406 ◽  
Author(s):  
G. E. Philippa ◽  
J. A. Mejia Galeana ◽  
C. Cassou ◽  
P. D. Wang ◽  
C. Guasch ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Beam ◽  
Electric Field ◽  
Emission Spectrum ◽  
Electron Beam Lithography ◽  
Electrical Contacts ◽  
Outer Diameter ◽  
Quantum Rings ◽  
Order Of Magnitude ◽  
Linewidth Broadening

AbstractThe fabrication of GaAs-GaAIAs coupled quantum dots and of quantum rings using electron beam lithography and dry etching is described. Coupled dots of physical diameter of 500 and 250 nm were fabricated and processed with top electrical contacts to apply an electric field. We show that the emission spectrum of coupled dots is modified by the electric field. Quantum rings of 400 nm outer diameter and wall thickness of 25 nm were fabricated. The emission spectrum from rings showed the quantum well emission shifted to higher energies and although its intensity decreased by about one order of magnitude there was little linewidth broadening.

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