Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO 2 Nanorod-Array Patterned Sapphire Substrates by MOCVD

2008 ◽  
Author(s):  
C. H. Chiu ◽  
C. L. Chao ◽  
M. H. Lo ◽  
Y. J. Cheng ◽  
H. C. Kuo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Nanorod Array ◽  
Epitaxial Lateral Overgrowth ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Patterned Sapphire Substrates

Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template

2015 ◽  
Vol 51 (5) ◽  
pp. 1-5 ◽  
Author(s):  
Chen-Hung Tsai ◽  
Mu-Hsin Ma ◽  
Yu-Feng Yin ◽  
Hsiang-Wei Li ◽  
Wei-Chih Lai ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Nanorod Array ◽  
Epitaxial Lateral Overgrowth ◽  
Light Emitting ◽  
Lateral Overgrowth

Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

2008 ◽  
Vol 93 (8) ◽  
pp. 081108 ◽  
Author(s):  
C. H. Chiu ◽  
H. H. Yen ◽  
C. L. Chao ◽  
Z. Y. Li ◽  
Peichen Yu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Nanorod Array ◽  
Epitaxial Lateral Overgrowth ◽  
Light Emitting ◽  
Lateral Overgrowth

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

2006 ◽  
Vol 203 (7) ◽  
pp. 1632-1635 ◽  
Author(s):  
K. Nakano ◽  
M. Imura ◽  
G. Narita ◽  
T. Kitano ◽  
Y. Hirose ◽  
...  
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Patterned Sapphire Substrates

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

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