Fabrication of GaN-based light emitting diodes using direct heteroepitaxial lateral overgrowth on patterned sapphire substrates with thick SiO2masks

2008 ◽  
Vol 5 (9) ◽  
pp. 3060-3062 ◽  
Author(s):  
K. Hoshino ◽  
T. Murata ◽  
M. Araki ◽  
K. Tadatomo
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Patterned Sapphire Substrates

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography

2011 ◽  
Vol 4 (6) ◽  
pp. 062102 ◽  
Author(s):  
Chien-Chih Kao ◽  
Yan-Kuin Su ◽  
Yi-Ta Hsieh ◽  
Yung-Chun Lee ◽  
Chiao-Yang Cheng ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates
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