scholarly journals Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs

2008 ◽  
Author(s):  
Oleg Zhevnyak ◽  
Vladimir Borzdov ◽  
Andrey Borzdov ◽  
Dmitry Pozdnyakov ◽  
Fadei Komarov
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Study ◽  
Channel Length

A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs

1988 ◽  
Vol 53 (22) ◽  
pp. 2205-2207 ◽  
Author(s):  
K. Sadra ◽  
C. M. Maziar ◽  
B. G. Streetman ◽  
D. S. Tang
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Study ◽  
Electron Hole

A Monte-Carlo study of sub-keV electron transport in water: the influence of the condensed phase

2005 ◽  
Vol 228 (1-4) ◽  
pp. 341-348 ◽  
Author(s):  
D. Emfietzoglou ◽  
G. Papamichael ◽  
I. Androulidakis ◽  
K. Karava ◽  
K. Kostarelos ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Condensed Phase ◽  
Monte Carlo Study

scholarly journals A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 213-216
Author(s):  
Mahbub Rashed ◽  
W.-K. Shih ◽  
S. Jallepalli ◽  
R. Zaman ◽  
T. J. T. Kwan ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Monte Carlo Study ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Bulk Materials ◽  
Strained Si ◽  
Mc Simulation

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

Lateral electron transport in monolayers of short chains at interfaces: A Monte Carlo study

2010 ◽  
Vol 375 (2-3) ◽  
pp. 503-507 ◽  
Author(s):  
Christopher B. George ◽  
Igal Szleifer ◽  
Mark A. Ratner
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Study

A Monte Carlo study for minority‐electron transport inp‐GaAs

1990 ◽  
Vol 68 (2) ◽  
pp. 621-626 ◽  
Author(s):  
Hideaki Taniyama ◽  
Masaaki Tomizawa ◽  
Tomofumi Furuta ◽  
Akira Yoshii
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Study
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