Highly Efficient Single-Crystalline Organic Thin Films For Quadratic Nonlinear Optics

1986 ◽  
Vol 25 (2) ◽  
pp. 252202 ◽  
Author(s):  
I. Ledoux ◽  
D. Josse ◽  
P. Vidakovic ◽  
J. Zyss
Author(s):  
S.R. Forrest ◽  
P.E. Burrows ◽  
V. Bulovic ◽  
E. Haskel ◽  
Z. Shen ◽  
...  

2000 ◽  
Vol 211 (1-4) ◽  
pp. 428-433 ◽  
Author(s):  
William E Carswell ◽  
Maria Ittu Zugrav ◽  
Francis C Wessling ◽  
Glen Haulenbeek

2010 ◽  
Vol 19 (6) ◽  
pp. 067101 ◽  
Author(s):  
Cai Jin-Ming ◽  
Zhang Yu-Yang ◽  
Hu Hao ◽  
Bao Li-Hong ◽  
Pan Li-Da ◽  
...  

2018 ◽  
Vol 5 (12) ◽  
pp. 1800147 ◽  
Author(s):  
Robby Janneck ◽  
Paul Heremans ◽  
Jan Genoe ◽  
Cedric Rolin

2008 ◽  
Vol 1150 ◽  
Author(s):  
Toshihiro Shimada

AbstractIt is important to obtain single crystalline organic thin films for electronics and optics applications. Due to the mismatching in the crystal symmetry, it is difficult to align the crystalline grains of organic molecular films even on single crystalline surfaces. We have developed several techniques for the artificial grain alignment in organic epitaxial growth. (1) Use of nanoscale-textured surfaces prepared by step bunching of vicinally-cut single crystalline surfaces, in which the height of the steps is critically important. (2) Application of external electric field. (3) Optical excitation of the molecules which can be applied to the polar semiconducting molecules. These techniques might be applicable to other materials including ionic materials and ferroelectrics.


2006 ◽  
Vol 446 (1) ◽  
pp. 23-45 ◽  
Author(s):  
Ileana Rau ◽  
Pawel Armatys ◽  
Pierre-Alain Chollet ◽  
Francois Kajzar ◽  
Roberto Zamboni

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)


2020 ◽  
Vol 13 (4) ◽  
pp. 866-872
Author(s):  
HAO Ya-ru ◽  
◽  
◽  
DENG Zhao-qi

1989 ◽  
Author(s):  
G. I. Stegeman ◽  
C. T. Seaton
Keyword(s):  

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