Metal Oxide Semiconductor Technology Scaling Issues And Their Relation To Submicron Lithography

Al F. Tasch, Jr.

doi:10.1117/12.7973077

Metal Oxide Semiconductor Technology Scaling Issues And Their Relation To Submicron Lithography

Optical Engineering ◽

10.1117/12.7973077 ◽

1983 ◽

Vol 22 (2) ◽

Author(s):

Al F. Tasch, Jr.

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Technology Scaling

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A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Journal of Applied Physics ◽

10.1063/1.4795170 ◽

2013 ◽

Vol 113 (10) ◽

pp. 103106 ◽

Cited By ~ 21

Author(s):

Kaikai Xu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Quantum Efficiency ◽

Light Emitting Diode ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Light Emitting

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Sputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technology

Thin Solid Films ◽

10.1016/s0040-6090(05)80060-4 ◽

1990 ◽

Vol 193-194 ◽

pp. 501-510 ◽

Cited By ~ 9

Author(s):

L. Dori ◽

A. Megdanis ◽

S.B. Brodsky ◽

M. Arienzo ◽

S.A. Cohen

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology

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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/12/129401 ◽

2011 ◽

Vol 20 (12) ◽

pp. 129401 ◽

Cited By ~ 2

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bi-Wei Liu ◽

Zheng Liu ◽

Bin Liang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Collection ◽

Single Event ◽

Semiconductor Technology ◽

Modulation Effect ◽

Single Event Transient ◽

Substrate Doping

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Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Cited By ~ 12

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Soft Error ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Memory Design

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The Impact of Technology Scaling for RF Complementary Metal–Oxide–Semiconductor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.011208 ◽

2009 ◽

Vol 48 (1) ◽

pp. 011208

Author(s):

Eiji Morifuji ◽

Hideki Kimijima ◽

Kenji Kojima ◽

Masaaki Iwai ◽

Fumitomo Matsuoka

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Technology Scaling ◽

Impact Of Technology ◽

The Impact

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Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation

Journal of Applied Physics ◽

10.1063/1.5083689 ◽

2019 ◽

Vol 125 (19) ◽

pp. 194501 ◽

Cited By ~ 3

Author(s):

Z. Ahmad ◽

A. Lisauskas ◽

H. G. Roskos ◽

K. K. O

Keyword(s):

Metal Oxide ◽

Infrared Radiation ◽

Schottky Diodes ◽

Complementary Metal Oxide Semiconductor ◽

Far Infrared ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Electronic Detection ◽

Far Infrared Radiation

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Metal Oxide Semiconductor (MOS) Technology Scaling Issues And Their Relation To Submicron Lithography

10.1117/12.933414 ◽

1982 ◽

Cited By ~ 5

Author(s):

Al F. Tasch, Jr.

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Technology Scaling

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Empirical implantation damage model and its effect on reverse short channel effect for 0.35 μm complementary metal–oxide–semiconductor technology

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589934 ◽

1998 ◽

Vol 16 (1) ◽

pp. 430

Author(s):

Jongmin Kim

Keyword(s):

Metal Oxide ◽

Damage Model ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Short Channel ◽

Short Channel Effect ◽

Implantation Damage ◽

Channel Effect

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Bit Swapping Linear Feedback Shift Register for Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology

International Journal of Engineering ◽

10.5829/idosi.ije.2017.30.08b.03 ◽

2017 ◽

Keyword(s):

Metal Oxide ◽

Low Power ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Shift Register ◽

Oxide Semiconductor ◽

Linear Feedback ◽

Semiconductor Technology ◽

Feedback Shift Register ◽

Power Application

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Retina for pattern matching in standard 0.6-μm complementary metal oxide semiconductor technology

Journal of Electronic Imaging ◽

10.1117/1.1762886 ◽

2004 ◽

Vol 13 (3) ◽

pp. 559 ◽

Cited By ~ 4

Author(s):

Olivier Aubreton

Keyword(s):

Metal Oxide ◽

Pattern Matching ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology

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