Active components in photonic integrated circuits using electron spins in quantum dots

2008 ◽  
Author(s):  
Amy V. Thompson ◽  
Hubert Seigneur ◽  
Michael N. Leuenberger ◽  
Winston V. Schoenfeld
Keyword(s):  
Quantum Dots ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Electron Spins ◽  
Active Components

Colloidal quantum dots as single-photon sources for photonic integrated circuits

2021 ◽  
Author(s):  
Alexander Eich ◽  
Tobias C. Spiekermann ◽  
Lisa Sommer ◽  
Helge Gehring ◽  
Julian B. Rasmus ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Integrated Circuits ◽  
Single Photon ◽  
Photonic Integrated Circuits ◽  
Colloidal Quantum Dots ◽  
Photon Sources

Pattern-assisted stacking colloidal quantum dots for photonic integrated circuits

Nanoscale ◽  
2019 ◽  
Vol 11 (29) ◽  
pp. 13885-13893 ◽  
Author(s):  
Kexiu Rong ◽  
Hui Liu ◽  
Kebin Shi ◽  
Jianjun Chen
Keyword(s):  
Quantum Dots ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Colloidal Quantum Dots ◽  
Simple Pattern ◽  
On Chip ◽  
Photonic Components

The simple pattern-assisted stacking approach using the same material is proposed to construct on-chip photonic components for integrated circuits.

Echelle grating – curved wave-guide demultiplexer for photonic integrated circuits

1992 ◽  
Vol 70 (10-11) ◽  
pp. 928-930
Author(s):  
M. Fallahi ◽  
K. A. McGreer ◽  
A. Delage ◽  
R. Normandin ◽  
I. M. Templeton ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Photonic Integrated Circuits ◽  
Ion Beam ◽  
Waveguide Structure ◽  
Active Components ◽  
Channel Spacing ◽  
Ion Beam Lithography ◽  
Echelle Grating ◽  
Wave Guides

A grating spectrometer integrated with curved output wave guides was designed and fabricated in GaAs–AlGaAs waveguide structure for use in the 1 μm wavelength range. By incorporating curved wave guides, a larger separation between output facets was obtained. This is desirable for future integration. High-quality patterns were fabricated by focused ion beam lithography and reactive ion etching. Eight outputs with a channel spacing of 2 nm were obtained. The potential of the structure for integration with active components is discussed.

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