Towards quantum dot and FRET-based optical DNA biosensor technology: surface chemistry and photoluminescence of CdSe/ZnS and Si quantum dots

Author(s):  
W. Russ Algar ◽  
Yuehui Zhou ◽  
Jiang Zeng ◽  
Ulrich J. Krull
2015 ◽  
Vol 242 ◽  
pp. 383-390
Author(s):  
Md Hosnay Mobarok ◽  
Tapas K. Purkait ◽  
Jonathan G.C. Veinot

The preparation and surface chemistry Si quantum dots (SiQDs) are currently an intense focus of research because of their size dependent optical properties and many potential applications. SiQDs offer several advantages over other quantum dots; Si is earth abundant, non-toxic and biocompatible. This account briefly highlights recent advancements made by our research group related to the synthesis, functionalization, surface dependent optical properties and applications of SiQDs.


2017 ◽  
Vol 5 (48) ◽  
pp. 12737-12743 ◽  
Author(s):  
Dong Hee Shin ◽  
Chan Wook Jang ◽  
Ju Hwan Kim ◽  
Jong Min Kim ◽  
Ha Seung Lee ◽  
...  

Bis(trifluoromethanesulfonyl)-amide (TFSA) is for the first time employed as a dopant for graphene for graphene/Si-quantum-dots-based photodetectors.


Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 56 ◽  
Author(s):  
Hayk A. Sarkisyan ◽  
David B. Hayrapetyan ◽  
Lyudvig S. Petrosyan ◽  
Eduard M. Kazaryan ◽  
Anton N. Sofronov ◽  
...  

This article discusses specific quantum transitions in a few-particle hole gas, localized in a strongly oblate lens-shaped quantum dot. Based on the adiabatic method, the possibility of realizing the generalized Kohn theorem in such a system is shown. The criteria for the implementation of this theorem in a lens-shaped quantum dot, fulfilled in the experiment, is presented. An analytical expression is obtained for the frequencies of resonant absorption of far-infrared radiation by a gas of heavy holes, which depends on the geometric parameters of the quantum dot. The results of experiments on far-infrared absorption in the arrays of p-doped Ge/Si quantum dots grown by molecular beam epitaxy (MBE) with gradually increasing average number of holes in dot are presented. Experimental results show that the Coulomb interaction between the holes does not affect the resonant frequency of the transitions. A good agreement between the theoretical and experimental results is shown.


2020 ◽  
Vol 30 (1) ◽  
pp. 79
Author(s):  
Vuong Van Cuong ◽  
Dinh Ba Khuong ◽  
Dao Van Lap

We demonstrate that a two-colour three-pulsenonlinear spectroscopy can be used to study the dynamics of excited carriers inSi quantum dot structures embedded in SiN. Decays of the transverse optical phonon population and the transverse acoustic phonon population are measured and discussed. A simple theoretical modelis also used to support interpretation of our experimental observations.


2016 ◽  
Vol 28 (2) ◽  
pp. 1322-1327 ◽  
Author(s):  
Xiaobo Chen ◽  
Wen Yang ◽  
Peizhi Yang ◽  
Junbao Yuan ◽  
Fei Zhao ◽  
...  

2015 ◽  
Vol 4 (3) ◽  
pp. 623-633 ◽  
Author(s):  
Abdullah Al-Ali ◽  
Neenu Singh ◽  
Bella Manshian ◽  
Tom Wilkinson ◽  
John Wills ◽  
...  

Quantum dots (QD) with varying surface chemistry can have an impact on cellular uptake and a range of indicators for cell perturbation.


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