Ultrafast time-resolved photoluminescence of Zn-Se-Te multilayers with type-II ZnTe/ZnSe quantum dots

2008 ◽  
Author(s):  
Maurice C-K. Cheung ◽  
Ian R. Sellers ◽  
Igor L. Kuskovsky ◽  
Alexander N. Cartwright ◽  
Bruce D. McCombe
Keyword(s):  
Quantum Dots ◽  
Type Ii ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well

2008 ◽  
Vol 19 (29) ◽  
pp. 295704 ◽  
Author(s):  
J Tatebayashi ◽  
B L Liang ◽  
R B Laghumavarapu ◽  
D A Bussian ◽  
H Htoon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Type Ii ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Ingaas Quantum Well

Time-resolved photoluminescence of type-II InAs/GaAs quantum dots covered by a thin GaAs1-xSbxlayer

2009 ◽  
Vol 6 (6) ◽  
pp. 1449-1452 ◽  
Author(s):  
Yu-An Liao ◽  
Wei-Ting Hsu ◽  
Ming-Chih Lee ◽  
Pei-Chin Chiu ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Type Ii ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn–Se–Te superlattice structures

2008 ◽  
Vol 92 (3) ◽  
pp. 032106 ◽  
Author(s):  
M. C.-K. Cheung ◽  
A. N. Cartwright ◽  
I. R. Sellers ◽  
B. D. McCombe ◽  
I. L. Kuskovsky
Keyword(s):  
Quantum Dots ◽  
Type Ii ◽  
Time Resolved ◽  
Superlattice Structures ◽  
Time Resolved Photoluminescence

Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice

1999 ◽  
Vol 38 (Part 2, No. 9A/B) ◽  
pp. L1006-L1008 ◽  
Author(s):  
Mayuko Fudeta ◽  
Hajime Asahi ◽  
Kumiko Asami ◽  
Yukio Narukawa ◽  
Yoichi Kawakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Short Period ◽  
Time Resolved Photoluminescence

Steady state and time resolved photoluminescence properties of CuInS2/ZnS quantum dots in solutions and in solid films

2015 ◽  
Vol 167 ◽  
pp. 333-338 ◽  
Author(s):  
Nikolaos Droseros ◽  
Kostas Seintis ◽  
Mihalis Fakis ◽  
Spiros Gardelis ◽  
Androula G. Nassiopoulou
Keyword(s):  
Quantum Dots ◽  
Steady State ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Solid Films ◽  
Time Resolved Photoluminescence

Localization and interdot carrier transfer in CdSe and CdZnMnSe quantum dots determined by cw and time-resolved photoluminescence

2007 ◽  
Vol 90 (20) ◽  
pp. 201916 ◽  
Author(s):  
J. H. Park ◽  
D. G. Choi ◽  
T. K. Lee ◽  
Eunsoon Oh ◽  
Sanghoon Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Carrier Transfer ◽  
Time Resolved Photoluminescence

State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots

1996 ◽  
Vol 54 (16) ◽  
pp. 11548-11554 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
P. J. Poole ◽  
A. Wojs ◽  
P. Hawrylak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence ◽  
State Filling

Charge Separation Between Strain Coupled Quantum Dots in a Self-Assembled InAs Quantum Dot Structure

1999 ◽  
Vol 571 ◽  
Author(s):  
W. V. Schoenfeld ◽  
T. Lundstrom ◽  
P. M. Petroff
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Preliminary Data ◽  
Charge Separation ◽  
Electron Hole ◽  
Coupled Quantum Dots ◽  
Time Resolved ◽  
Inas Quantum Dot ◽  
Storage Times ◽  
Time Resolved Photoluminescence

ABSTRACTWe present an InAs QDs structure designed to separate and store photo-generated electron-hole pairs. Charge separation in the structure is demonstrated using power dependent photoluminescence and biased photoluminescence. Preliminary data from time resolved photoluminescence suggest storage times in the device in the μsec range.

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