Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn–Se–Te superlattice structures

2008 ◽  
Vol 92 (3) ◽  
pp. 032106 ◽  
Author(s):  
M. C.-K. Cheung ◽  
A. N. Cartwright ◽  
I. R. Sellers ◽  
B. D. McCombe ◽  
I. L. Kuskovsky
Keyword(s):  
Quantum Dots ◽  
Type Ii ◽  
Time Resolved ◽  
Superlattice Structures ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well

2008 ◽  
Vol 19 (29) ◽  
pp. 295704 ◽  
Author(s):  
J Tatebayashi ◽  
B L Liang ◽  
R B Laghumavarapu ◽  
D A Bussian ◽  
H Htoon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Type Ii ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Ingaas Quantum Well

Ultrafast time-resolved photoluminescence of Zn-Se-Te multilayers with type-II ZnTe/ZnSe quantum dots

2008 ◽  
Author(s):  
Maurice C-K. Cheung ◽  
Ian R. Sellers ◽  
Igor L. Kuskovsky ◽  
Alexander N. Cartwright ◽  
Bruce D. McCombe
Keyword(s):  
Quantum Dots ◽  
Type Ii ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence of type-II InAs/GaAs quantum dots covered by a thin GaAs1-xSbxlayer

2009 ◽  
Vol 6 (6) ◽  
pp. 1449-1452 ◽  
Author(s):  
Yu-An Liao ◽  
Wei-Ting Hsu ◽  
Ming-Chih Lee ◽  
Pei-Chin Chiu ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Type Ii ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF TYPE II SUPERLATTICE STRUCTURES WITH VARYING ABSORBER WIDTHS

2011 ◽  
Vol 20 (03) ◽  
pp. 541-548
Author(s):  
BLAIR C. CONNELLY ◽  
GRACE D. METCALFE ◽  
PAUL H. SHEN ◽  
MICHAEL WRABACK
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier Lifetime ◽  
Careful Analysis ◽  
Dominant Factor ◽  
Excitation Density ◽  
Type Ii ◽  
Time Resolved ◽  
Type Ii Superlattice ◽  
Superlattice Structures ◽  
Time Resolved Photoluminescence

We report time-resolved photoluminescence measurements on a set of long-wave infrared InAs / GaSb type II superlattice absorber samples with various widths as a function of temperature and excitation density. Careful analysis of the photoluminescence data determines the minority carrier lifetime and background carrier density as a function of temperature, and provides information on the acceptor energy and density in each sample. Results indicate that carrier lifetime is dominated by Shockley-Read-Hall recombination with a lifetime of ~30 ns at 77 K for all samples. Below 40 K, background carriers are observed to freeze-out in conjunction with increased contributions from radiative recombination. An acceptor energy level of ~20 meV above the valance band is also determined for all samples. Variations of carrier lifetime between each sample do not strongly correlate with absorber width, indicating that barrier recombination is not the dominant factor limiting the carrier lifetime in our samples.

Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice

1999 ◽  
Vol 38 (Part 2, No. 9A/B) ◽  
pp. L1006-L1008 ◽  
Author(s):  
Mayuko Fudeta ◽  
Hajime Asahi ◽  
Kumiko Asami ◽  
Yukio Narukawa ◽  
Yoichi Kawakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Short Period ◽  
Time Resolved Photoluminescence

Steady state and time resolved photoluminescence properties of CuInS2/ZnS quantum dots in solutions and in solid films

2015 ◽  
Vol 167 ◽  
pp. 333-338 ◽  
Author(s):  
Nikolaos Droseros ◽  
Kostas Seintis ◽  
Mihalis Fakis ◽  
Spiros Gardelis ◽  
Androula G. Nassiopoulou
Keyword(s):  
Quantum Dots ◽  
Steady State ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Solid Films ◽  
Time Resolved Photoluminescence

Localization and interdot carrier transfer in CdSe and CdZnMnSe quantum dots determined by cw and time-resolved photoluminescence

2007 ◽  
Vol 90 (20) ◽  
pp. 201916 ◽  
Author(s):  
J. H. Park ◽  
D. G. Choi ◽  
T. K. Lee ◽  
Eunsoon Oh ◽  
Sanghoon Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Carrier Transfer ◽  
Time Resolved Photoluminescence

State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots

1996 ◽  
Vol 54 (16) ◽  
pp. 11548-11554 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
P. J. Poole ◽  
A. Wojs ◽  
P. Hawrylak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence ◽  
State Filling
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