scholarly journals A comparative study on the dielectric functions of isolated Si nanocrystals and densely stacked Si nanocrystal layer embedded in SiO 2 synthesized with Si ion implantation

2008 ◽  
Author(s):  
L. Ding ◽  
T. P. Chen ◽  
Y. Liu ◽  
Y. C. Liu
Keyword(s):  
Ion Implantation ◽  
Comparative Study ◽  
Si Nanocrystals ◽  
Si Nanocrystal ◽  
Si Ion Implantation

scholarly journals Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation

2007 ◽  
Vol 101 (10) ◽  
pp. 103525 ◽  
Author(s):  
L. Ding ◽  
T. P. Chen ◽  
Y. Liu ◽  
M. Yang ◽  
J. I. Wong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Nanocrystal Size ◽  
Si Nanocrystals ◽  
Si Ion Implantation

Luminescent Nanometer-Sized Si Crystals Formed in an amorphous Silicon Dioxide Matrk by Ion Implantation and Annealing

1995 ◽  
Vol 388 ◽  
Author(s):  
T.S. Iwayama ◽  
Y. Terao ◽  
A. Kamiya ◽  
M. Takeda ◽  
S. Nakao ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Time ◽  
Band Gap Energy ◽  
Electron Hole ◽  
Quantum Confinement Effects ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Average Size ◽  
Si Ion Implantation ◽  
Hole Recombination

AbstractSi ion implantation followed by thermal annealing has been used to synthesize luminescent nanometer-sized Si crystals in an amorphous Si02 matrix. Transmission electron microscopy indicates the formation of Si nanocrystals by annealing at 1100 °C, and the growth in average size of Si nanocrystals with increasing annealing time. the shape of the emission spectrum of the photoluminescence is found to be independent of both excitation energy and annealing time, while the excitation spectrum of photoluminescence increases as the photon energy increases and its shape depends on annealing time. the results indicate that the photons are absorbed by Si nanocrystals, for which the band-gap energy is modified by the quantum confinement effects, and the emission of photons is not due to direct electron-hole recombination inside Si nanocrystals but is related to defects probably at the interface between Si nanocrystals and Si02.

Low-dose Si ion implantation into semi-insulating LEC GaAs

1981 ◽  
Vol 17 (21) ◽  
pp. 817 ◽  
Author(s):  
H. Yamazaki ◽  
T. Honda ◽  
S. Miyazawa
Keyword(s):  
Ion Implantation ◽  
Low Dose ◽  
Lec Gaas ◽  
Si Ion Implantation

Highly uniform E/D MESFETs by Si ion-implantation and methane/hydrogen plasma gate recessing

1991 ◽  
Vol 6 (9) ◽  
pp. 912-915 ◽  
Author(s):  
G Zou ◽  
R Pereira ◽  
M de Potter ◽  
M Van Hove ◽  
W De Raedt ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Hydrogen Plasma ◽  
Highly Uniform ◽  
Si Ion Implantation

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

scholarly journals Two-dimensional photonic crystals increasing vertical light emission from Si nanocrystal-rich thin layers

2018 ◽  
Vol 9 ◽  
pp. 2287-2296
Author(s):  
Lukáš Ondič ◽  
Marian Varga ◽  
Ivan Pelant ◽  
Alexander Kromka ◽  
Karel Hruška ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Light Emission ◽  
Periodic Structures ◽  
Normal Direction ◽  
Thin Layers ◽  
Two Dimensional ◽  
Lattice Constants ◽  
Leaky Modes ◽  
Si Nanocrystals ◽  
Si Nanocrystal

We have fabricated two-dimensional photonic crystals (PhCs) on the surface of Si nanocrystal-rich SiO2 layers with the goal to maximize the photoluminescence extraction efficiency in the normal direction. The fabricated periodic structures consist of columns ordered into square and hexagonal pattern with lattice constants computed such that the red photoluminescence of Si nanocrystals (SiNCs) could couple to leaky modes of the PhCs and could be efficiently extracted to surrounding air. Samples having different lattice constants and heights of columns were investigated in order to find the configuration with the best performance. Spectral overlap of the leaky modes with the luminescence spectrum of SiNCs was verified experimentally by measuring photonic band diagrams of the leaky modes employing angle-resolved spectroscopy and also theoretically by computing the reflectance spectra. The extraction enhancement within different spatial angles was evaluated by means of micro-photoluminescence spectroscopy. More than 18-fold extraction enhancement was achieved for light propagating in the normal direction and up to 22% increase in overall intensity was obtained at the spatial collection angle of 14°.

Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

2019 ◽  
Vol 40 (3) ◽  
pp. 431-434 ◽  
Author(s):  
Man Hoi Wong ◽  
Ken Goto ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Masataka Higashiwaki
Keyword(s):  
Ion Implantation ◽  
Si Ion Implantation
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