scholarly journals Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation

2007 ◽  
Vol 101 (10) ◽  
pp. 103525 ◽  
Author(s):  
L. Ding ◽  
T. P. Chen ◽  
Y. Liu ◽  
M. Yang ◽  
J. I. Wong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Nanocrystal Size ◽  
Si Nanocrystals ◽  
Si Ion Implantation

scholarly journals Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation

2021 ◽  
Vol 8 ◽  
Author(s):  
S. Lagomarsino ◽  
A. M. Flatae ◽  
H. Kambalathmana ◽  
F. Sledz ◽  
L. Hunold ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Thermal Activation ◽  
Single Photon ◽  
Color Centers ◽  
Zero Phonon Line ◽  
Silicon Vacancy ◽  
Sensing Applications ◽  
Strong Luminescence ◽  
Si Ion Implantation

Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application, such as in quantum technologies and sensing. Due to the strong luminescence concentrated in its sharp zero-phonon line at room temperature, SiV centers are being investigated as single-photon sources for quantum communication, and also as temperature probes for sensing. Here, we discussed strategies for the fabrication of SiV centers in diamond based on Si-ion implantation followed by thermal activation. SiV color centers in high-quality single crystals have the best optical properties, but polycrystalline micro and nanostructures are interesting for applications in nano-optics. Moreover, we discuss the photoluminescence properties of SiV centers in phosphorous-doped diamond, which are relevant for the creation of electroluminescent devices, and nanophotonics strategies to improve the emission characteristics of the SiV centers. Finally, the optical properties of such centers at room and high temperatures show the robustness of the center and give perspectives for temperature-sensing applications.

Optical Properties Of Si Nanocrystals Formed In Si02 By Ion Implantation

1998 ◽  
Vol 507 ◽  
Author(s):  
C. W. White ◽  
S. P. Withrow ◽  
A. Meldrum ◽  
J. D. Budai ◽  
D. M. Hembree ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Ion Implantation ◽  
Quantum Confinement ◽  
Dose Dependence ◽  
Interface States ◽  
High Dose ◽  
Size Dependent ◽  
Si Nanocrystals

ABSTRACTSi nanocrystals formed in SiO2 by high-dose ion implantation and annealing give rise to strong optical absorption and intense photoluminescence (PL). The dose dependence of optical absorption provides evidence for size-dependent quantum confinement in the Si nanocrystals. PL peak energies are nearly independent of dose suggesting that surface or interface states play an important role in PL. Estimates of absorption bandgaps in the nanocrystals are given.

Luminescent Nanometer-Sized Si Crystals Formed in an amorphous Silicon Dioxide Matrk by Ion Implantation and Annealing

1995 ◽  
Vol 388 ◽  
Author(s):  
T.S. Iwayama ◽  
Y. Terao ◽  
A. Kamiya ◽  
M. Takeda ◽  
S. Nakao ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Time ◽  
Band Gap Energy ◽  
Electron Hole ◽  
Quantum Confinement Effects ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Average Size ◽  
Si Ion Implantation ◽  
Hole Recombination

AbstractSi ion implantation followed by thermal annealing has been used to synthesize luminescent nanometer-sized Si crystals in an amorphous Si02 matrix. Transmission electron microscopy indicates the formation of Si nanocrystals by annealing at 1100 °C, and the growth in average size of Si nanocrystals with increasing annealing time. the shape of the emission spectrum of the photoluminescence is found to be independent of both excitation energy and annealing time, while the excitation spectrum of photoluminescence increases as the photon energy increases and its shape depends on annealing time. the results indicate that the photons are absorbed by Si nanocrystals, for which the band-gap energy is modified by the quantum confinement effects, and the emission of photons is not due to direct electron-hole recombination inside Si nanocrystals but is related to defects probably at the interface between Si nanocrystals and Si02.

Low-dose Si ion implantation into semi-insulating LEC GaAs

1981 ◽  
Vol 17 (21) ◽  
pp. 817 ◽  
Author(s):  
H. Yamazaki ◽  
T. Honda ◽  
S. Miyazawa
Keyword(s):  
Ion Implantation ◽  
Low Dose ◽  
Lec Gaas ◽  
Si Ion Implantation

Highly uniform E/D MESFETs by Si ion-implantation and methane/hydrogen plasma gate recessing

1991 ◽  
Vol 6 (9) ◽  
pp. 912-915 ◽  
Author(s):  
G Zou ◽  
R Pereira ◽  
M de Potter ◽  
M Van Hove ◽  
W De Raedt ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Hydrogen Plasma ◽  
Highly Uniform ◽  
Si Ion Implantation
Sign in / Sign up

Export Citation Format

Share Document