scholarly journals Thermally stable multi-mode polymer optical waveguide fabricated by single-step photo-patterning of fluorinated polyimide/epoxy hybrids

2008 ◽  
Author(s):  
Yuichi Urano ◽  
Ningjuan Chen ◽  
Kaichiro Nakano ◽  
Katsumi Maeda ◽  
Shinji Ando
Keyword(s):  
Optical Waveguide ◽  
Single Step ◽  
Thermally Stable ◽  
Fluorinated Polyimide ◽  
Multi Mode

In-situ Activation of a Highly Volatile and Thermally Stable Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition

2019 ◽  
Author(s):  
Nathan O'Brien ◽  
Polla Rouf ◽  
Rouzbeh Samii ◽  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Indium Nitride ◽  
Atomic Layer ◽  
Reaction Chamber ◽  
Single Step ◽  
Thermally Stable ◽  
Layer Deposition ◽  
In Situ Activation ◽  
Low Levels

Indium nitride (InN) is characterised by its superb electron mobility making it a ground-breaking material for high frequency electronics. The difficulty of depositing highquality crystalline InN currently impedes its broad implementation in electronic devices. Herein, we report a new highly volatile and thermally stable In(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial hexagonal InN by atomic layer deposition (ALD). The new triazenide precursor was found to sublime at 80 °C and thermogravimetric analysis showed single step volatilisation with an onset temperature of 145 °C and negligible residual mass. Strikingly, two temperature intervals were observed when depositing InN films. In the high temperature interval, the precursor underwent thermal decomposition inside the ALD reaction chamber to produce a more reactive indium compound whilst retaining self-limiting growth behaviour. Stochiometric InN films with very low levels of impurities were grown epitaxially on 4H-SiC. This new triazenide precursor now enables ALD of InN for semi-conductor applications.<br>

Low-loss and thermally stable TE-mode selective polymer waveguide using photosensitive fluorinated polyimide

2002 ◽  
Vol 14 (9) ◽  
pp. 1297-1299 ◽  
Author(s):  
Jae-Wook Kang ◽  
Jang-Joo Kim ◽  
Jinkyu Kim ◽  
Xiangdan Li ◽  
Myong-Hoon Lee
Keyword(s):  
Thermally Stable ◽  
Low Loss ◽  
Polymer Waveguide ◽  
Fluorinated Polyimide ◽  
Te Mode

Evaluation of fluorinated polyimide etching processes for optical waveguide fabrication

1999 ◽  
Vol 341 (1-2) ◽  
pp. 192-195 ◽  
Author(s):  
J.H. Kim ◽  
E.J. Kim ◽  
H.C. Choi ◽  
C.W. Kim ◽  
J.H. Cho ◽  
...  
Keyword(s):  
Optical Waveguide ◽  
Fluorinated Polyimide ◽  
Waveguide Fabrication

In-situ Activation of a Highly Volatile and Thermally Stable Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition

2019 ◽  
Author(s):  
Nathan O'Brien ◽  
Polla Rouf ◽  
Rouzbeh Samii ◽  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Indium Nitride ◽  
Atomic Layer ◽  
Reaction Chamber ◽  
Single Step ◽  
Thermally Stable ◽  
Layer Deposition ◽  
In Situ Activation ◽  
Low Levels

Indium nitride (InN) is characterised by its superb electron mobility making it a ground-breaking material for high frequency electronics. The difficulty of depositing highquality crystalline InN currently impedes its broad implementation in electronic devices. Herein, we report a new highly volatile and thermally stable In(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial hexagonal InN by atomic layer deposition (ALD). The new triazenide precursor was found to sublime at 80 °C and thermogravimetric analysis showed single step volatilisation with an onset temperature of 145 °C and negligible residual mass. Strikingly, two temperature intervals were observed when depositing InN films. In the high temperature interval, the precursor underwent thermal decomposition inside the ALD reaction chamber to produce a more reactive indium compound whilst retaining self-limiting growth behaviour. Stochiometric InN films with very low levels of impurities were grown epitaxially on 4H-SiC. This new triazenide precursor now enables ALD of InN for semi-conductor applications.<br>

Opto-Electronic Chip-on-Film Packaging Technology Using Low-CTE Fluorinated Polyimide Optical Waveguide Films

2014 ◽  
Vol 4 (10) ◽  
pp. 1582-1588 ◽  
Author(s):  
Mitsuo Usui ◽  
Shigeki Ishibashi ◽  
Hirooki Hirata ◽  
Suzuko Ishizawa ◽  
Nobutatsu Koshoubu ◽  
...  
Keyword(s):  
Optical Waveguide ◽  
Packaging Technology ◽  
Fluorinated Polyimide ◽  
Chip On Film
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