Infrared reflectance of optical phonon modes in AlGaN epitaxial layers grown on sapphire substrates

2008 ◽  
Author(s):  
Jun-Rong Chen ◽  
Tien-Chang Lu ◽  
Gen-Sheng Huang ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
Optical Phonon ◽  
Epitaxial Layers ◽  
Infrared Reflectance ◽  
Phonon Modes ◽  
Sapphire Substrates

Anomalous behaviour of optical phonon modes in ZnSe epitaxial layers

1997 ◽  
Vol 28 (7) ◽  
pp. 551-554 ◽  
Author(s):  
O. Pagès ◽  
M. A. Renucci ◽  
O. Briot ◽  
R. L. Aulombard
Keyword(s):  
Optical Phonon ◽  
Anomalous Behaviour ◽  
Epitaxial Layers ◽  
Phonon Modes

Investigation of Composition-dependent Optical Phonon Modes in AlxGa1-xN Epitaxial Layers Grown on Sapphire Substrates

2009 ◽  
Vol 1167 ◽  
Author(s):  
Jun-Rong Chen ◽  
Tien-Chang Lu ◽  
Hao-Chung Kuo ◽  
Shing-Chung Wang
Keyword(s):  
High Frequency ◽  
Lattice Mismatch ◽  
Optical Axis ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Reflectance Spectra ◽  
Organic Chemical ◽  
Epitaxial Layers ◽  
Infrared Reflectance ◽  
Phonon Modes

AbstractWe reported the systematical study of optical properties of hexagonal AlxGa1-xN epitaxial films grown on c-sapphire substrate using metal-organic chemical vapor deposition. By performing Fourier transform infrared spectroscopy measurements, the high-frequency dielectric constants and phonon frequencies can be obtained by theoretically fitting the experimental infrared reflectance spectra using a four-phase layered model. The high-frequency dielectric constant of AlxGa1-xN varies between 4.98 and 4.52 for ε∝,│(polarization perpendicular to the optical axis) and between 4.95 and 4.50 for ε∝,//(polarization parallel to the optical axis) respectively when the aluminum composition changes from 0.15 to 0.24. Furthermore, from experimental infrared reflectance spectra of AlxGa1-xN films, a specific absorption dip at 785 cm-1 was observed when the aluminum composition is larger than 0.24. The dip intensity increases and the dip frequency shifts from 785 to 812 cm-1 as aluminum composition increases from 0.24 to 0.58. According to the reciprocal space map of x-ray diffraction measurements, the emergence of this dip could be resulted from the effects of strain relaxation in AlGaN epitaxial layers due to the large lattice mismatch between GaN and AlGaN epitaxial film.

scholarly journals Low-frequency optical phonon modes and carrier mobility in the halide perovskite CH3NH3PbBr3 using terahertz time-domain spectroscopy

2017 ◽  
Vol 111 (20) ◽  
pp. 201903 ◽  
Author(s):  
Daming Zhao ◽  
Jonathan M. Skelton ◽  
Hongwei Hu ◽  
Chan La-o-vorakiat ◽  
Jian-Xin Zhu ◽  
...  
Keyword(s):  
Time Domain ◽  
Optical Phonon ◽  
Carrier Mobility ◽  
Low Frequency ◽  
Terahertz Time Domain Spectroscopy ◽  
Phonon Modes ◽  
Time Domain Spectroscopy ◽  
Halide Perovskite

Optical phonon modes and infrared dielectric properties of monoclinic CoWO4microcrystals

2015 ◽  
Vol 49 (4) ◽  
pp. 045305 ◽  
Author(s):  
Roberto L Moreira ◽  
Rafael M Almeida ◽  
Kisla P F Siqueira ◽  
Cintia G Abreu ◽  
Anderson Dias
Keyword(s):  
Dielectric Properties ◽  
Optical Phonon ◽  
Phonon Modes

scholarly journals Investigation of optically active E1 transversal optic phonon modes in AlxGa1−xN layers deposited on 6H–SiC substrates using infrared reflectance

1998 ◽  
Vol 73 (13) ◽  
pp. 1760-1762 ◽  
Author(s):  
P. Wisniewski ◽  
W. Knap ◽  
J. P. Malzac ◽  
J. Camassel ◽  
M. D. Bremser ◽  
...  
Keyword(s):  
Optically Active ◽  
Infrared Reflectance ◽  
Phonon Modes ◽  
Optic Phonon

Large diamagnetism and low-lying optical phonon modes in Pt--Cd γ-phase

2021 ◽  
pp. 163520
Author(s):  
Nazir Ahmad ◽  
Takumi Hasegawa ◽  
Naoki Nakamura ◽  
Ryuji Higashinaka ◽  
Tatsuma D. Matsuda ◽  
...  
Keyword(s):  
Optical Phonon ◽  
Phonon Modes
Sign in / Sign up

Export Citation Format

Share Document