Polarized infrared reflectance study of wurtzite GaN thin film: The effects of angle of incidence on the optical phonon modes

2007 ◽  
Vol 25 (6) ◽  
pp. 1557-1561 ◽  
Author(s):  
S. S. Ng ◽  
Z. Hassan ◽  
H. Abu Hassan
2016 ◽  
Vol 846 ◽  
pp. 614-619
Author(s):  
Pauline Yew ◽  
Lee Sai Cheong ◽  
Ng Sha Shiong ◽  
Yoon Tiem Leong ◽  
Haslan Abu Hassan ◽  
...  

Polarized infrared (IR) reflectance measurement was carried out to investigate the optical phonon modes of wurtzite structure In0.92Ga0.08N thin film grown by molecular beam epitaxy. Composition dependence of IR reststrahlen features was observed. Theoretical polarized IR reflectance spectrum was simulated using the standard multilayer optics technique with a multi-oscillator dielectric function model. By obtaining the best fit of experimental and theoretical spectrum, the Brillouin zone center E1 optical phonon modes together with the dielectric constant, layer thickness, free carriers concentration and mobility were extracted non-destructively. The extracted E1 optical phonon modes were compared with those generated from modified random element isodisplacement (MREI) model.


2008 ◽  
Author(s):  
Jun-Rong Chen ◽  
Tien-Chang Lu ◽  
Gen-Sheng Huang ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
...  

2017 ◽  
Vol 111 (20) ◽  
pp. 201903 ◽  
Author(s):  
Daming Zhao ◽  
Jonathan M. Skelton ◽  
Hongwei Hu ◽  
Chan La-o-vorakiat ◽  
Jian-Xin Zhu ◽  
...  

2015 ◽  
Vol 49 (4) ◽  
pp. 045305 ◽  
Author(s):  
Roberto L Moreira ◽  
Rafael M Almeida ◽  
Kisla P F Siqueira ◽  
Cintia G Abreu ◽  
Anderson Dias

1998 ◽  
Vol 73 (13) ◽  
pp. 1760-1762 ◽  
Author(s):  
P. Wisniewski ◽  
W. Knap ◽  
J. P. Malzac ◽  
J. Camassel ◽  
M. D. Bremser ◽  
...  

2013 ◽  
Vol 209 ◽  
pp. 111-115 ◽  
Author(s):  
Sandip V. Bhatt ◽  
M.P. Deshpande ◽  
Bindiya H. Soni ◽  
Nitya Garg ◽  
Sunil H. Chaki

Thin film deposition of PbS is conveniently carried out by chemical reactions of lead acetate with thiourea at room temperature. Energy dispersive analysis of X-ray (EDAX), X-ray diffraction (XRD), selected area electron diffraction patterns (SAED), UV-Vis-NIR spectrophotometer, Scanning Electron Microscopy (SEM), Atomic force microscopy (AFM), Photoluminescence (PL) and Raman spectroscopy techniques are used for characterizing thin films. EDAX spectra shows that no impurity is present and XRD pattern indicates face centered cubic structure of PbS thin films. The average crystallite size obtained using XRD is about 15nm calculated using Scherrer’s formula and that determined from Hall-Williamson plot was found to be 18nm. SAED patterns indicate that the deposited PbS thin films are polycrystalline in nature. Blue shift due to quantum confinement was seen from the UV-Vis-NIR absorption spectra of thin film in comparison with bulk PbS. The Photoluminescence spectra obtained for thin film with different excitation sources shows sharp emission peaks at 395nm and its intensity of photoluminescence increases with increasing the excitation wavelength. Raman spectroscopy of deposited thin film was used to study the optical phonon modes at an excitation wavelength of 488nm using (Ar+) laser beam.


1995 ◽  
Vol 389 ◽  
Author(s):  
Shaohua Liu ◽  
Peter Solomon ◽  
R. Carpio ◽  
B. Fowler ◽  
D. Simmons ◽  
...  

ABSTRACTThis paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.


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