Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching

Author(s):  
Haiyong Gao ◽  
Fawang Yan ◽  
Yang Zhang ◽  
Jinmin Li ◽  
Yiping Zeng ◽  
...  
2010 ◽  
Vol 18 (9) ◽  
pp. 9728 ◽  
Author(s):  
Younghun Jung ◽  
Jihyun Kim ◽  
Soohwan Jang ◽  
Kwang Hyeon Baik ◽  
Yong Gon Seo ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Hsu-Hung Hsueh ◽  
Sin-Liang Ou ◽  
Chiao-Yang Cheng ◽  
Dong-Sing Wuu ◽  
Ray-Hua Horng

InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the PSSs were further modified using wet etching. Through the wet etching treatment, some dry-etched induced damage on the substrate surface formed in the PSS fabrication process can be removed to achieve a high epilayer quality. In comparison to the LEDs prepared on the conventional sapphire substrate (CSS) and cone-shaped PSS without wet etching, the LED grown on the cone-shaped PSS by performing wet etching for 3 min exhibited 55% and 10% improvements in the light output power (at 350 mA), respectively. This implies that the modification of cone-shaped PSSs possesses high potential for LED applications.


Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.


2007 ◽  
Vol 91 (5) ◽  
pp. 051117 ◽  
Author(s):  
Martin F. Schubert ◽  
Sameer Chhajed ◽  
Jong Kyu Kim ◽  
E. Fred Schubert ◽  
Jaehee Cho

2006 ◽  
Vol 18 (14) ◽  
pp. 1512-1514 ◽  
Author(s):  
Seok-In Na ◽  
Ga-Young Ha ◽  
Dae-Seob Han ◽  
Seok-Soon Kim ◽  
Ja-Yeon Kim ◽  
...  

2020 ◽  
Vol 30 (22) ◽  
pp. 2001283
Author(s):  
Fang Liu ◽  
Zhihong Zhang ◽  
Xin Rong ◽  
Ye Yu ◽  
Tao Wang ◽  
...  

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