Traceable calibration and characterization of infrared detectors and detector arrays and matrices

2007 ◽  
Author(s):  
Evangelos Theocharous ◽  
Jihong Fan ◽  
Xudong Li ◽  
Xiqi Hou ◽  
Bin Yang
Keyword(s):  
Infrared Detectors ◽  
Detector Arrays ◽  
Traceable Calibration

Thermal conductivity characterization of in-situ fabricated polysilicon nanowires for uncooled thermoelectric infrared detectors

2015 ◽  
Author(s):  
Mohammad J. Modarres-Zadeh ◽  
Nahida Akhter ◽  
Ronald Hellmer ◽  
Michael Aragon ◽  
Reza Abdolvand
Keyword(s):  
Thermal Conductivity ◽  
Infrared Detectors

Low-Frequency Noise Spectroscopy Characterization of HgCdTe Infrared Detectors

2020 ◽  
Vol 67 (2) ◽  
pp. 547-551 ◽  
Author(s):  
Liqi Zhu ◽  
Jian Huang ◽  
Zongheng Xie ◽  
Zhuo Deng ◽  
Lu Chen ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectroscopy

The HAWAII Infrared Detector Arrays: testing and astronomical characterization of prototype and science-grade devices

New Astronomy ◽  
1996 ◽  
Vol 1 (2) ◽  
pp. 177-196 ◽  
Author(s):  
K.-W. Hodapp ◽  
J.L. Hora ◽  
D.N.B. Hall ◽  
L.L. Cowie ◽  
M. Metzger ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Detector Arrays

Deposition and characterization of gold black coatings for thermal infrared detectors

2010 ◽  
Author(s):  
S. Ilias ◽  
P. Topart ◽  
C. Larouche ◽  
P. Beaupré ◽  
D. Gay ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Thermal Infrared

Off-Area Bonding of HgCdTe Photoconductive Infrared Detectors using Tri-Layer Photolithography and Wet/Dry Etching Techniques

1996 ◽  
Vol 450 ◽  
Author(s):  
Sridhar Manthripragada ◽  
Kelley Hu ◽  
Frank Peters ◽  
Andre Burgess ◽  
Sachidananda Babu ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Infrared Detectors ◽  
Chemical Etching ◽  
Metal Film ◽  
Active Area ◽  
Material Damage ◽  
Fabrication Technique ◽  
Detector Arrays ◽  
Bonding Scheme

ABSTRACTOn-area wire bonding of HgCdTe photoconductive (PC) infrared detectors usually causes material damage underneath the bonding pads. Such damage may propagate into the active area, potentially degrading performance and posing long-term reliability problems. Some off-area bonding fabrication techniques can also induce some degree of semiconductor material damage. In this paper, we report a relatively straightforward off-area bonding scheme that solves these problems. The process uses multiple photolithography and chemical etching steps to create a continuous slope or staircase in the HgCdTe leading down to the epoxy surface. The staircase ensures smooth step coverage for the subsequent metalization. Tri-layer photolithography (resist /metal/resist) and reactive ion etching (RIE) is then used to remove the epoxy in the bonding pad area. Since all areas other than the pad region are protected by the metal film, no RIE radiation damage is induced to the active area. The contact metalization is achieved by using standard liftoff techniques. Our so called staircase off-area bonding fabrication technique can be used to fabricate highly reliable, high density, small-size, detector arrays.

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