High-performance 4H-SiC single photon avalanche diode operating at solar blind wavelength

Author(s):  
Xiaobin Xin ◽  
Jun Hu ◽  
Petre Alexandov ◽  
Jian H. Zhao ◽  
Brenda L. VanMil ◽  
...  
2008 ◽  
Vol 20 (18) ◽  
pp. 1587-1589 ◽  
Author(s):  
Alexey Vert ◽  
Stanislav Soloviev ◽  
Jody Fronheiser ◽  
Peter Sandvik

2018 ◽  
Vol 24 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Myung-Jae Lee ◽  
Augusto Ronchini Ximenes ◽  
Preethi Padmanabhan ◽  
Tzu-Jui Wang ◽  
Kuo-Chin Huang ◽  
...  

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Peter Vines ◽  
Kateryna Kuzmenko ◽  
Jarosław Kirdoda ◽  
Derek C. S. Dumas ◽  
Muhammad M. Mirza ◽  
...  

2010 ◽  
Author(s):  
Chong Hu ◽  
Xiaoguang Zheng ◽  
Joe C. Campbell ◽  
Bora M. Onat ◽  
Xudong Jiang ◽  
...  

2008 ◽  
Vol 600-603 ◽  
pp. 1203-1206 ◽  
Author(s):  
Jun Hu ◽  
Xiao Bin Xin ◽  
Petre Alexandrov ◽  
Jian Hui Zhao ◽  
Brenda L. VanMil ◽  
...  

This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solar blind wavelength of 280 nm. The SPAD has an avalanche breakdown voltage of 114V. At 90% and 95% of the breakdown voltage, the SPAD shows a low dark current of 57.2fA and 159fA, respectively. The quantum efficiency of 29.8% at 280nm and <0.007% at 400nm indicates a high UV-to-visible rejection ratio of >4300. Single photon counting measurement at 280nm shows that a single photon detection efficiency of 2.83% with a low dark count rate of 22kHz is achieved at the avalanche breakdown voltage of 116.8V.


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