High-speed fully-integrated electronics for high-performance measurements with single photon avalanche diode arrays

2019 ◽  
Author(s):  
Giulia Acconcia ◽  
Angelo Gulinatti ◽  
Massimo Ghioni ◽  
Ivan Rech
Keyword(s):  
High Speed ◽  
High Performance ◽  
Single Photon ◽  
Performance Measurements ◽  
Fully Integrated ◽  
Avalanche Diode ◽  
Integrated Electronics

scholarly journals High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

2018 ◽  
Vol 24 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Myung-Jae Lee ◽  
Augusto Ronchini Ximenes ◽  
Preethi Padmanabhan ◽  
Tzu-Jui Wang ◽  
Kuo-Chin Huang ◽  
...  
Keyword(s):  
High Performance ◽  
Single Photon ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Avalanche Diode ◽  
Back Illuminated

scholarly journals High performance planar germanium-on-silicon single-photon avalanche diode detectors

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Peter Vines ◽  
Kateryna Kuzmenko ◽  
Jarosław Kirdoda ◽  
Derek C. S. Dumas ◽  
Muhammad M. Mirza ◽  
...  
Keyword(s):  
High Performance ◽  
Single Photon ◽  
Avalanche Diode

Superconducting NbN thin films on various (X/Y/Z-cut) lithium niobate substrates

2021 ◽  
Author(s):  
Mengting Si ◽  
Wang Chengli ◽  
Can Yang ◽  
Wei Peng ◽  
Lixing You ◽  
...  
Keyword(s):  
Thin Films ◽  
Lithium Niobate ◽  
Thick Film ◽  
High Performance ◽  
Detection Efficiency ◽  
Single Photon ◽  
Integrated Photonics ◽  
Photon Detectors ◽  
Optical Elements ◽  
Fully Integrated

Abstract Lithium niobate (LN) exhibits outstanding properties in various application of photonics, electronics, and optoelectronics, showing potentials in integration. Due to the directional dependence of LN tensor properties, optical elements made up by LN favor the type of LN substrate. To introduce high-performance superconducting nanowire single-photon detectors to LN-integrated photonics chips, superconducting NbN thin films with thicknesses from 3 to 50 nm were deposited on X-cut, Y-cut, and Z-cut LN substrates using magnetron sputtering at room temperature. The different thickness dependencies of Tc, δTc, and residual resistance ratios are observed in NbN thin films on different LN substrates. NbN thin films on X-cut and Y-cut LN substrates are polycrystalline with a transition temperature (Tc) of ~6 K for a 6-nm-thick film. While NbN thin films are epitaxially textured on Z-cut LN substrates with Tc of 11.5 K for a 6-nm-thick film. NbN-SNSPD on X-cut LN substrates shows a weak saturation trend of its system detection efficiency; however, the performance of NbN-SNSPD on Z-cut LN substrates is limited. We evaluated the selection of cuts and concluded that X-cut and Y-cut LN are more suitable to be a platform of integrated LN photonic chips from the aspect of NbN-SNSPD. This study helps fabricate high-performance SNSPDs on fully integrated photonics chips on LN substrates.

High-performance InGaAs/InP-based single-photon avalanche diode with reduced afterpulsing

2010 ◽  
Author(s):  
Chong Hu ◽  
Xiaoguang Zheng ◽  
Joe C. Campbell ◽  
Bora M. Onat ◽  
Xudong Jiang ◽  
...  
Keyword(s):  
High Performance ◽  
Single Photon ◽  
Avalanche Diode
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