Dispersive white-light spectral interferometry used to measure thickness of a thin film on a substrate

2007 ◽  
Author(s):  
P. Hlubina ◽  
D. Ciprian ◽  
J. Luňáček ◽  
M. Lesňák ◽  
R. Chlebus
Keyword(s):  
Thin Film ◽  
White Light ◽  
Spectral Interferometry

Measuring small thickness changes of a thin film by white-light spectral interferometry

2009 ◽  
Author(s):  
P. Hlubina ◽  
J. Lunácek ◽  
D. Ciprian ◽  
M. Lunácková
Keyword(s):  
Thin Film ◽  
White Light ◽  
Small Thickness ◽  
Spectral Interferometry

Thickness Measurement of Thin Film Based on White-Light Spectral Interferometry

2009 ◽  
Vol 29 (7) ◽  
pp. 1877-1880 ◽  
Author(s):  
薛晖 Xue Hui ◽  
沈伟东 Shen Weidong ◽  
顾培夫 Gu Peifu ◽  
罗震岳 Luo Zhenyue ◽  
刘旭 Liu Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
White Light ◽  
Thickness Measurement ◽  
Spectral Interferometry

Thickness of SiO2 thin film on silicon wafer measured by dispersive white-light spectral interferometry

2006 ◽  
Vol 84 (3) ◽  
pp. 511-516 ◽  
Author(s):  
P. Hlubina ◽  
D. Ciprian ◽  
J. Luňáček ◽  
M. Lesňák
Keyword(s):  
Thin Film ◽  
Silicon Wafer ◽  
White Light ◽  
Spectral Interferometry ◽  
Sio2 Thin Film

scholarly journals Dispersive white-light spectral interferometry with absolute phase retrieval to measure thin film

2006 ◽  
Vol 14 (17) ◽  
pp. 7678 ◽  
Author(s):  
P. Hlubina ◽  
D. Ciprian ◽  
J. Lunácek ◽  
M. Lesnák
Keyword(s):  
Thin Film ◽  
White Light ◽  
Phase Retrieval ◽  
Spectral Interferometry ◽  
Absolute Phase

Effects of electron-withdrawing groups in imidazole-phenanthroline ligands and their influence on the photophysical properties of EuIII complexes for white light-emitting diodes

2017 ◽  
Vol 41 (18) ◽  
pp. 9826-9839 ◽  
Author(s):  
Boddula Rajamouli ◽  
Rachna Devi ◽  
Abhijeet Mohanty ◽  
Venkata Krishnan ◽  
Sivakumar Vaidyanathan
Keyword(s):  
Thin Film ◽  
Quantum Yield ◽  
White Light ◽  
Light Emitting Diode ◽  
Photophysical Properties ◽  
Red Light ◽  
Europium Complexes ◽  
Light Emitting ◽  
White Light Emitting Diodes ◽  
Phenanthroline Ligands

The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).

Up-conversion of 980 nm light into white light from sol-gel derived thin film made with new combinations of LaF3:Ln3+ nanoparticles

2009 ◽  
Vol 19 (16) ◽  
pp. 2392 ◽  
Author(s):  
Sri Sivakumar ◽  
John-Christopher Boyer ◽  
Enrico Bovero ◽  
Frank C. J. M. van Veggel
Keyword(s):  
Thin Film ◽  
White Light ◽  
Sol Gel ◽  
New Combinations
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