CMOS color image sensor with overlaid organic photoelectric conversion layers having narrow absorption band: depression of dark current

2007 ◽  
Author(s):  
Mikio Ihama ◽  
Masayuki Hayashi ◽  
Yoshiki Maehara ◽  
Tetsurou Mitsui ◽  
Shunji Takada
Keyword(s):  
Absorption Band ◽  
Dark Current ◽  
Color Image ◽  
Image Sensor ◽  
Photoelectric Conversion ◽  
Narrow Absorption Band

CMOS color image sensor with overlaid organic photoconductive layers having narrow absorption band

2007 ◽  
Author(s):  
Shunji Takada ◽  
Mikio Ihama ◽  
Masafumi Inuiya ◽  
Takashi Komatsu ◽  
Takahiro Saito
Keyword(s):  
Absorption Band ◽  
Color Image ◽  
Image Sensor ◽  
Narrow Absorption Band

A single chip 1/2" frame transfer CCD color image sensor

1984 ◽  
Author(s):  
N. Mitani ◽  
T. Furusawa ◽  
Y. Tsuchihashi ◽  
Y. Kitamura ◽  
Y. Kiriyama ◽  
...  
Keyword(s):  
Color Image ◽  
Image Sensor ◽  
Single Chip

Research status of dark current in CMOS image sensor

2021 ◽  
Author(s):  
Lei Yan ◽  
feng shi ◽  
hongchang cheng ◽  
ye yang ◽  
bin ren ◽  
...  
Keyword(s):  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Research Status

scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

scholarly journals Phosphorus Versus Arsenic: Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal

2020 ◽  
Vol 67 (7) ◽  
pp. 1241-1250
Author(s):  
Alexandre Le Roch ◽  
Cedric Virmontois ◽  
Philippe Paillet ◽  
Jean-Marc Belloir ◽  
Serena Rizzolo ◽  
...  
Keyword(s):  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Random Telegraph Signal ◽  
Doping Element ◽  
Radiation Induced

A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor

2008 ◽  
Vol 47 (7) ◽  
pp. 5390-5395 ◽  
Author(s):  
Koichi Mizobuchi ◽  
Satoru Adachi ◽  
Jose Tejada ◽  
Hiromichi Oshikubo ◽  
Nana Akahane ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dark Current ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Wide Dynamic Range

A solid state color image sensor using ZnSe-Zn1-xCdxTe heterojunction thin-film photoconductor

1980 ◽  
Author(s):  
Y. Terui ◽  
T. Wada ◽  
M. Yoshino ◽  
H. Kadota ◽  
T. Komeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Color Image ◽  
Image Sensor
Sign in / Sign up

Export Citation Format

Share Document